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Twinning and faceting in early stages of diamond growth by chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

John C. Angus
Affiliation:
Department of Chemical Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7217
Mahendra Sunkara
Affiliation:
Department of Chemical Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7217
Scott R. Sahaida
Affiliation:
Electronic Materials Center, Kobe Steel USA Inc., 79TW Alexander Drive, Research Triangle Park, North Carolina 27709
Jeffrey T. Glass
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919
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Abstract

Flat, hexagonally shaped diamond platelets were observed during the initial stage of microwave plasma assisted deposition of diamond. The platelets are approximately 2.5 μm in linear dimension and are oriented with their large six-sided faces parallel to the silicon substrate. A re-entrant groove, running parallel to the large six-sided face, is present in the small side faces of the platelets. Larger diamond crystals, with a fully developed three-dimensional morphology, all have re-entrant grooves in other directions. The observations support the hypothesis that the growth rate of {111} faceted diamond crystals is greatly enhanced by the presence of microtwins (multiple stacking errors), which give rise to re-entrant corners where they intersect the crystal surface. Fully developed {111} faceting and a strong influence of re-entrant corners is expected when the average lifetime of a carbon atom bonded once to the surface is much less than the average time between addition of adatoms at adjacent surface sites.

Type
Articles
Copyright
Copyright © Materials Research Society 1992

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