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Transition from brittle fracture to ductile behavior in 4H–SiC

Published online by Cambridge University Press:  31 January 2011

Ming Zhang ,
H. M. Hobgood ,
J. L. Demenet  and
P. Pirouz
Ming Zhang
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7204
H. M. Hobgood
Affiliation:
Cree, Inc., 4600 Silicon Drive, Durham, North Carolina 27703
J. L. Demenet
Affiliation:
Laboratoire de Metallurgie Physique, Centre National de Recherche Scientifique (CNRS), SP2MI, 86962 Futuroscope Cedex, France
P. Pirouz*
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7204
*
a)Address all correspondence to this author. e-mail: pxp7@cwru.edu
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Abstract

The four-point bend test was used to measure the brittle-to-ductile transition (BDT) temperature in precracked samples of semi-insulating 4H—SiC at four different strain rates. As in other semiconductors, the BDT temperature TBDT was found to be very sharp, within ±15 °C, and to shift to higher temperatures with increasing rates of the applied load (or strain rate). The results appear to be consistent with a transition temperature Tc recently observed in the yield stress of the same material as measured by compression experiments. However, strain-rate measurements in four-point bend tests are not strictly equivalent to those in compression experiments, and therefore it is difficult to directly compare the measured BDT temperatures with the yield stress transitions. Nevertheless, it is believed that the reasonable agreement between TBDT and Tc supports the model recently proposed to explain these transition temperatures.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 5 , May 2003 , pp. 1087 - 1095
Copyright
Copyright © Materials Research Society 2003

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