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Temperature-dependent ferroelectric properties of (Pb0.75La0.25)TiO3 thin films

Published online by Cambridge University Press:  03 March 2011

S.T. Zhang ,
J.P. Li ,
Y.F. Chen ,
Z.G. Liu  and
N.B. Ming
S.T. Zhang*
Affiliation:
Department of Materials Science and Engineering & National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093, People’s Republic of China
J.P. Li
Affiliation:
Department of Materials Science and Engineering & National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093, People’s Republic of China
Y.F. Chen
Affiliation:
Department of Materials Science and Engineering & National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093, People’s Republic of China
Z.G. Liu
Affiliation:
Department of Materials Science and Engineering & National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093, People’s Republic of China
N.B. Ming
Affiliation:
Department of Materials Science and Engineering & National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093, People’s Republic of China
*
a)Address all correspondence to this author.e-mail: stzhang@nju.edu.cn
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Abstract

Polycrystalline (Pb0.75La0.25)TiO3 (PLT25) thin films have been fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. The room-temperature structures and dielectric properties are studied by x-ray diffraction, scanning electron microscopy, and HP4294A impedance/phase analyzer. The temperature-dependent ferroelectric properties are systematically investigated by using a RT66A ferroelectric tester combined with a temperature-controllable vacuum chamber. For well-saturated hysteresis loops, with the temperature decrease from 295 to 97 K, the coercive field (Ec) and remanent polarization (Pr) increase and the saturated polarization (Ps) is almost temperature-independent. However, this is not the case for the unsaturated hysteresis loops. Temperature-dependent fatigue-resistance of the PLT25 films is also experimentally established: after 2.22 × 109 switching cycles, the nonvolatile polarizationdecreases 38% when measured at room-temperature and it decreases 15% at 97 K. The nature and population of point defects and their effects on the subtle variations of the Ec, Ps, Pr, and fatigue-resistance against temperature are discussed in detail.

Keywords

FerroelectricityThin filmTemperature-dependence
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 6 , June 2004 , pp. 1638 - 1642
Copyright
Copyright © Materials Research Society 2004

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References

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