Skip to main content Accessibility help
×
Home
Hostname: page-component-747cfc64b6-rxvp8 Total loading time: 0.276 Render date: 2021-06-12T19:16:33.777Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Temperature dependence of photoluminescence properties of In-doped cadmium zinc telluride

Published online by Cambridge University Press:  31 January 2011

Tao Wang
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Wanqi Jie
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Dongmei Zeng
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Ge Yang
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Yadong Xu
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Weihua Liu
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Jijun Zhang
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Corresponding
E-mail address:
Get access

Abstract

Temperature-dependent photoluminescence (PL) spectra were measured to characterize the In-doped cadmium zinc telluride (CdZnTe, or CZT) crystals along the growth direction in the range of 10 to 60 K. High-resistivity CZT samples with 1.2 ppm In dopant at the tip and low-resistivity samples with 60 ppm In dopant at the heel have been assessed. The PL intensity quenching of D0X were fitted with two activation energies for high-resistivity CZT sample and only one activation energy for low-resistivity sample, respectively, suggesting different recombination mechanisms. The C-line was observed in the PL spectra of low-resistivity CZT sample and considered to the results of the isoelectronic complexes, InCd–VCd–InCd, while in high-resistivity CZT sample, shallow donor accepted pair (DAP) transition was identified, and thought to be related to InCd–VCd. The A-center in PL spectra was observed in low-resistivity CZT sample, which is indicative of more cadmium vacancies. It turns out that indium in low-resistivity CZT sample has not been doped as efficiently as in high-resistivity CZT sample because of the self-compensation.

Type
Articles
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below.

References

1Li, G., Zhang, X., Hua, H.Jie, W.: A modified vertical bridgman method for growth of high-quality Cd1−xZnxTe crystals. J. Electron. Mater. 34(9), 1215 2005CrossRefGoogle Scholar
2Schlesinger, T.E., Toney, J.E., Yoon, H., Lee, E.Y., Brunett, B.A., Franks, L.James, R.B.: Cadmium zinc telluride and its use as a nuclear radiation detector material. Mater. Sci. Eng. Rep. 32(4–5), 103 2001CrossRefGoogle Scholar
3Fiederle, M., Fauler, A., Babentsov, V., Konrath, J.P.Franc, J.: Growth of high resistivity CdTe and (Cd,Zn)Te crystals, Proc. SPIE,5198, 48 2004CrossRefGoogle Scholar
4Fochuk, P., Panchuk, O., Feychuk, P., Shcherbak, L., Savitskyi, A., Parfenyuk, O., Ilashchuk, M., Hage-Ali, M.Siffert, P.: Indium dopant behaviour in CdTe single crystals. Nucl. Instrum. Methods Phys. Res., Sect. A 458(1–2), 104 2001CrossRefGoogle Scholar
5Stadler, W., Hofmann, D.M., Alt, H.C., Muschik, T., Meyer, B.K., Weigel, E., Muller, G., Salk, M., Rupp, E.Benz, K.W.: Optical investigations of defects in Cd1−xZnxTe. Phys. Rev. B 51(16), 10619 1995CrossRefGoogle ScholarPubMed
6Suzuki, K., Seto, S., Sawada, T., Imai, K., Adachi, M.Inabe, K.: Photoluminescence measurements on undoped CdZnTe grown by the high-pressure Bridgman method. J. Electron. Mater. 30(6), 603 2001CrossRefGoogle Scholar
7Li, Q., Jie, W., Fu, L., Yang, G., Zha, G., Wang, T.Zeng, D.: Photoluminescence analysis on the indium doped Cd0.9Zn0.1Te crystal. J. Appl. Phys. 100(1), 013518 2006CrossRefGoogle Scholar
8Dean, P.J.: Photoluminescence as a diagnostic of semiconductors. Prog. Cryst. Growth Char. 5, 89 1982CrossRefGoogle Scholar
9Leroux, M., Grandjean, N., Beaumont, B., Nataf, G., Semond, F., Massies, J.Gibart, P.: Temperature quenching of photoluminescence intensities in undoped and doped GaN. J. Appl. Phys. 86(7), 3721 1999CrossRefGoogle Scholar
10Halstead, R.E.Aven, M.: Photoluminescence of defect-exciton complexes in II-VI compounds. Phys. Rev. Lett. 14(3), 64 1965CrossRefGoogle Scholar
11Bimberg, D., Sondergeld, M.Grobe, E.: Thermal dissociation of excitons bounds to neutral acceptors in high-purity GaAs. Phys. Rev. B 4(10), 3451 1971CrossRefGoogle Scholar
12Yu, P.Y.Cardona, M.: Fundamentals of Semiconductor Springer Berlin 2001 60Google Scholar
13Worschech, L., Ossau, W.Landwehr, W.: Characterization of a strain-inducing defect in CdTe by magnetoluminescence spectroscopy. Phys. Rev. B 52(19), 13965 1995CrossRefGoogle ScholarPubMed
14Seto, S., Suzuki, K., Abastillas, V.N.Inabe, K.: Compensating related defects in In-doped bulk CdTe. J. Cryst. Growth 214, 974 2000CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Temperature dependence of photoluminescence properties of In-doped cadmium zinc telluride
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Temperature dependence of photoluminescence properties of In-doped cadmium zinc telluride
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Temperature dependence of photoluminescence properties of In-doped cadmium zinc telluride
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *