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Synthesis and characterization of SiC whiskers

Published online by Cambridge University Press:  29 June 2016

L. Wang ,
H. Wada  and
L. F. Allard
L. Wang
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109
H. Wada
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109
L. F. Allard
Affiliation:
High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
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Abstract

SiC whiskers were synthesized by the carbothermal reduction of silica with an addition of halide (3NaF · AlF3 or NaF) as an auxiliary bath. The whiskers were β phase (3C) and grew in the [111] direction. Three distinctive morphologies were observed: (1) Type A: thin and straight; (2) Type B: thick and bamboo-like; and (3) Type C: thick, straight, and smooth. Type A whiskers contained a high density of basal plane (111) stacking faults along their entire length, whereas Type B whiskers showed periodic changes between stacking faults and well-defined single crystals. Type C whiskers showed stacking faults on the other {111} planes instead of on the basal (111) plane. Silica formed molten fluorosilicate with halide and SiC grew via a vapor-solid reaction mechanism through gaseous SiO. These reactions can be expressed as (SiO2) + C (s) = SiO (g) + CO (g) and SiO (g) + 3CO (g) = SiC (s) + 2CO2 (g). The effects of processing parameters on the morphology and size of the whiskers were examined and the relationship between the morphological development of the whiskers and the stacking fault energy was determined.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 1 , January 1992 , pp. 148 - 163
Copyright
Copyright © Materials Research Society 1992

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