Skip to main content Accessibility help
×
Home
Hostname: page-component-65dc7cd545-2sbtp Total loading time: 0.604 Render date: 2021-07-23T18:47:18.548Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride–silicon carbide alloy transition layer

Published online by Cambridge University Press:  03 March 2011

Z. Gu
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506
J.H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506
B. Raghothamachar
Affiliation:
Department of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, New York 11794
M. Dudley
Affiliation:
Department of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, New York 11794
D. Zhuang
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
Z. Sitar
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
D.W. Coffey
Affiliation:
High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Corresponding
E-mail address:
Get access

Abstract

The advantages of depositing AlN–SiC alloy transition layers on SiC substrates before the seeded growth of bulk AlN crystals were examined. The presence of AlN–SiC alloy layers helped to suppress the SiC decomposition by providing vapor sources of silicon and carbon. In addition, cracks in the final AlN crystals decreased from ∼5 × 106/mm2 for those grown directly on SiC substrates to less than 1 × 106/mm2 for those grown on AlN–SiC alloy layers because of the intermediate lattice constants and thermal expansion coefficient of AlN–SiC. X-ray diffraction confirmed the formation of pure single-crystalline AlN upon both AlN–SiC alloys and SiC substrates. X-ray topography (XRT) demonstrated that strains present in the AlN crystals decreased as the AlN grew thicker. However, the XRT for AlN crystals grown directly on SiC substrates was significantly distorted with a high overall defect density compared to those grown on AlN–SiC alloys.

Type
Articles
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below.

References

1Sevast’yanov, V.G., Ezhov, Yu.S., Simonenko, E.P., and Kuznetsov, N.T.: Thermodynamic analysis of production of silicon carbide via silicon dioxide and carbon. Mater. Sci. Forum 457–460, 59 (2004).CrossRefGoogle Scholar
2Liu, L. and Edgar, J.H.: Substrates for GaN epitaxy. Mater. Sci. Eng. R 37, 61 (2002).CrossRefGoogle Scholar
3Safaraliev, G.K., Tairov, Yu.M., and Tsvetkov, V.F.: Silicon carbide-aluminum nitride wide-band solid solutions. Sov. Phys. Semicond. 25, 865 (1991).Google Scholar
4Gu, Z., Edgar, J.H., Payzant, E.A., Meyer, H.M., Walker, L.R., Sarua, A., and Kuball, M.: Sublimation growth of aluminum nitride-silicon carbide alloy crystals on SiC (0001) substrates, in GaN, AlN, InN and Their Alloys, edited by Wetzel, C., Gil, B., Kuzuhara, M. and Manfra, M. (Mater. Res. Soc. Symp. Proc. 831, Warrendale, PA, 2005), p. 95.Google Scholar
5Shi, Y., Liu, B., Liu, L., Edgar, J.H., Payzant, E.A., Hayes, J.M., and Kuball, M.: New technique for sublimation growth of AlN single crystals. MRS Internet J. Nitride Semicond. Res. 6, 5 (2001).CrossRefGoogle Scholar
6Shi, Y., Liu, B., Liu, L., Edgar, J.H., Meyer, H.M. III, Payzant, E.A., Walker, L.R., Evans, N.D., Swadener, J.G., and Chaudhuri, J.: Initial nucleation study and new technique for sublimation growth of AlN on SiC substrate. Phys. Status Solidi A 188, 757 (2001).3.0.CO;2-S>CrossRefGoogle Scholar
7Gu, Z., Du, L., Edgar, J.H., Payzant, E.A., Walker, L.R., Liu, R., Sarua, A., Kuball, M., and Engelhard, M.H.: Aluminum nitride-silicon carbide alloy crystals grown on SiC substrates by sublimation. MRS Internet J. Nitride Semicond. Res. 10, 5 (2005).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride–silicon carbide alloy transition layer
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride–silicon carbide alloy transition layer
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride–silicon carbide alloy transition layer
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *