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Residual strain field in indented GaAs

Published online by Cambridge University Press:  31 January 2011

Pascal Puech
Affiliation:
Laboratoire de Physique des Solides de Toulouse-IRSAMC-UMR 5477 CNRS, Université Paul Sabatier, 118 route de Narbonne, 31062 TOULOUSE, Cedex, France
François Demangeot
Affiliation:
Laboratoire de Physique des Solides de Toulouse-IRSAMC-UMR 5477 CNRS, Université Paul Sabatier, 118 route de Narbonne, 31062 TOULOUSE, Cedex, France
Paulo Sergio Pizani
Affiliation:
Departamento de Fisica, Universidade Federal de São Carlos, C.P. 369, 13560–970 São Carlos, SP, Brazil
Samuel Wey
Affiliation:
LPST—UMR 5477 CNRS, Université Paul Sabatier, 118 route de Narbonne, 31062 TOULOUSE Cedex, France
Chantal Fontaine
Affiliation:
LAAS—UPR 8001 CNRS, avenue du Colonel Roche, 31077 TOULOUSE, Cedex, France
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Abstract

This paper presents an optical mean to probe carefully the strain field generated by a microindentation on [111]-oriented GaAs sample, using micro-Raman spectroscopy and microphotoluminescence spectroscopy. Raman and photoluminescence signals recorded from the same point of the sample are directly compared. The frequency shift of the longitudinal and transverse optical phonons was analyzed in great detail, revealing unambiguously the presence of both compressive and tensile strains within the indented area. Outside the indentation fingerprint, the magnitude of strain deduced from luminescence measurements was found to be lower than the one determined by Raman scattering. The Raman spectra revealed significant variations of the optical phonons polarizability with the deformation. Finally, atomic force microscope images of the indented zone aid in the interpretation.

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Articles
Copyright
Copyright © Materials Research Society 2003

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