Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-27T03:01:09.663Z Has data issue: false hasContentIssue false
  • English
  • Français

Residual strain field in indented GaAs

Published online by Cambridge University Press:  31 January 2011

Pascal Puech ,
François Demangeot ,
Paulo Sergio Pizani ,
Samuel Wey  and
Chantal Fontaine
Pascal Puech
Affiliation:
Laboratoire de Physique des Solides de Toulouse-IRSAMC-UMR 5477 CNRS, Université Paul Sabatier, 118 route de Narbonne, 31062 TOULOUSE, Cedex, France
François Demangeot
Affiliation:
Laboratoire de Physique des Solides de Toulouse-IRSAMC-UMR 5477 CNRS, Université Paul Sabatier, 118 route de Narbonne, 31062 TOULOUSE, Cedex, France
Paulo Sergio Pizani
Affiliation:
Departamento de Fisica, Universidade Federal de São Carlos, C.P. 369, 13560–970 São Carlos, SP, Brazil
Samuel Wey
Affiliation:
LPST—UMR 5477 CNRS, Université Paul Sabatier, 118 route de Narbonne, 31062 TOULOUSE Cedex, France
Chantal Fontaine
Affiliation:
LAAS—UPR 8001 CNRS, avenue du Colonel Roche, 31077 TOULOUSE, Cedex, France
Get access

Abstract

This paper presents an optical mean to probe carefully the strain field generated by a microindentation on [111]-oriented GaAs sample, using micro-Raman spectroscopy and microphotoluminescence spectroscopy. Raman and photoluminescence signals recorded from the same point of the sample are directly compared. The frequency shift of the longitudinal and transverse optical phonons was analyzed in great detail, revealing unambiguously the presence of both compressive and tensile strains within the indented area. Outside the indentation fingerprint, the magnitude of strain deduced from luminescence measurements was found to be lower than the one determined by Raman scattering. The Raman spectra revealed significant variations of the optical phonons polarizability with the deformation. Finally, atomic force microscope images of the indented zone aid in the interpretation.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 6 , June 2003 , pp. 1474 - 1480
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Gogotsi, Y.G., Kailer, A., and Nickel, K.G., Mater. Res. Innov. 1, 3 (1997).CrossRefGoogle Scholar
2.Besson, J.M., Itié, J.P., Polian, A., Weill, G., Mansot, J.L., Gonzalez, J., Phys. Rev. B 44, 4214 (1991).CrossRefGoogle Scholar
3.Venkateswaran, U.D., Cui, L.J., Weinstein, B.A., and Chambers, F.A., Phys. Rev. B 45, 9237 (1992).CrossRefGoogle Scholar
4.Lucazeau, G. and Abello, L., J. Matter. Res. 12, 2262 (1997).CrossRefGoogle Scholar
5.Sparks, R.G. and Paesler, M.A., J. Appl. Phys 71, 891 (1992).CrossRefGoogle Scholar
6.Lilleodden, E.T., Bonin, W., Nelson, J., Wyrobek, J.T., and Gerberich, W.W., J. Mater. Res. 10, 2162 (1995).CrossRefGoogle Scholar
7.Gogotsi, Y.G., Domnich, V., Dub, S.N., Kailer, A., Nickel, K.G., J. Mater. Res. 15, 871 (2000).CrossRefGoogle Scholar
8.Pizani, P.S., Lanciotti, F., Jr., Jasinevicius, R.G., Duduch, J.G., and Porto, A.J.V., J. Appl. Phys. 87, 1280 (2000).CrossRefGoogle Scholar
9.Unpublished test measurements obtained with Dilor and Renishaw spectrometers, P. Puech, (2003).Google Scholar
10.Puech, P., Landa, G., Carles, R., Pizani, P.S., Daran, E., Fontaine, C., J. Appl. Phys. 77, 1126 (1995).CrossRefGoogle Scholar
11.Puech, P., Pinel, S., Jasinevicius, R.G., and Pizani, P.S., J. Appl. Phys. 88, 4582 (2000).CrossRefGoogle Scholar
12.Cerdeira, F., Buchenauer, C.J., Pollak, F.H., and Cardona, M., Phys. Rev. B 5, 580 (1972).CrossRefGoogle Scholar
13.Tiong, K.K., Amittharaj, P.M., and Pollak, F.H., Appl. Phys. Lett. 44, 122 (1984).CrossRefGoogle Scholar
14.Jimenez, J., Martin, E., Torres, A., and Landesman, J.P., Phys. Rev. B 58, 10463 (1998).CrossRefGoogle Scholar
15.Tessler, L.R., Hermann, C., Lampel, G., Lassailly, Y., Fontaine, C., Daran, E., and Munoz-Yagüe, A., Appl. Phys. Lett. 64, 895 (1994).CrossRefGoogle Scholar
16.Landolt-Börnstein Tables, edited by Madelung, O., Schulz, M., and Weiss, H. (Springer, New York, 1982), Vol. 17a.Google Scholar
17.Mailhiot, C. and Smith, D.L., J. Vac. Technol. A 7, 609 (1989).CrossRefGoogle Scholar
18.Casey, H.C. and Panish, M.B., Heterostructure Lasers, Pts A and B (Academic, New York, 1978).Google Scholar
19.Castagné, J., Fontaine, C., Bedel, E., and Munoz-Yaguë, A., J. Appl. Phys. 64, 2372 (1998).CrossRefGoogle Scholar
20.Aspnes, D.E. and Studna, A.A., Phys. Rev. B 27, 2 (1983).CrossRefGoogle Scholar
21.Downloadable at www.lpst.ups-tlse.fr/users/pascal.Google Scholar
22.Kailer, A., Nickel, K.G., and Gogotsi, Y.G., J. Raman Spectrosc. 30, 939 (1999).3.0.CO;2-C>CrossRefGoogle Scholar