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Reduced-pressure MOCVD of highly crystalline BaTiO3 thin films

Published online by Cambridge University Press:  31 January 2011

Peter C. Van Buskirk
Affiliation:
Advanced Technology Materials, Danbury, Connecticut 06810
Robin Gardiner
Affiliation:
Advanced Technology Materials, Danbury, Connecticut 06810
Peter S. Kirlin
Affiliation:
Advanced Technology Materials, Danbury, Connecticut 06810
Steven Nutt
Affiliation:
Division of Engineering, Brown University, Providence, Rhode Island 02912
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Abstract

Epitaxial BaTi3 films have been grown on NdGaO3 [100] substrates by reduced pressure MOCVD for the first time. The substrate temperature was 1000 °C and the total pressure was 4 Torr. Electron and x-ray diffraction measurements indicate highly textured, single phase films on the NdGaO3 substrate which are predominantly [100], with [110] also present. TEM and selected area electron diffraction (SAED) indicate two specific orientational relationships between the [110] and the [001] diffraction patterns.

Type
Communications
Copyright
Copyright © Materials Research Society 1992

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