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Real-time x-ray scattering study of growth behavior of sputter-deposited LaNiO3 thin films on Si substrates

Published online by Cambridge University Press:  31 January 2011

Hsin-Yi Lee*
Affiliation:
Research Division, Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan, Republic of China
K. S. Liang
Affiliation:
Research Division, Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan, Republic of China
Chih-Hao Lee
Affiliation:
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China
Tai-Bor Wu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China
*
a)Address all correspondence to this authorhylee@srrc.gov.tw
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Abstract

Real-time x-ray reflectivity and diffraction measurements under in situ sputtering conditions were employed to study the growth behavior of LaNiO3 thin films on a Si substrate. Our results clearly show there is a transition layer of 60 Å, which grew in the first 6 min of deposition. The in situ x-ray-diffraction patterns indicated that this transition layer is amorphous. Subsequently, a polycrystalline overlayer grew as observed from the in situ x-ray reflectivity curves and diffraction patterns. Nucleation and growth took place on this transition layer with random orientation and then the polycrystalline columnar textures of (100) and (110) grew on the top of this random orientation layer. By comparing the integrated intensities of two Bragg peaks in the plane normal of x-ray diffraction, it was found that a crossover of the growth orientation from the ⟨110⟩ to the ⟨100ߩ direction occurred and the ability of (100) texturization enhanced with increasing film thickness beyond a certain critical value.

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Articles
Copyright
Copyright © Materials Research Society 2000

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Real-time x-ray scattering study of growth behavior of sputter-deposited LaNiO3 thin films on Si substrates
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