Hostname: page-component-84b7d79bbc-7nlkj Total loading time: 0 Render date: 2024-07-25T07:27:27.608Z Has data issue: false hasContentIssue false

Reaction-mediated texturing of barium ferrite magnetic thin films on ZnO underlayer

Published online by Cambridge University Press:  03 March 2011

Jinshan Li
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
Stephen S. Rosenblum
Affiliation:
Applied Electronics Center, Kobe Steel USA Inc., Palo Alto, California 94304
Hidetaka Hayashi
Affiliation:
Applied Electronics Center, Kobe Steel USA Inc., Palo Alto, California 94304
Get access

Abstract

Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite (BaFe12O19 or BaM) thin films have been prepared in situ at a substrate temperature of 640 °C without postdeposition annealing. Using our facing target sputtering system, BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230 Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2°c-axis dispersion angle, as indicated by x-ray diffraction (XRD). Cross-section transmission electron microscopy (XTEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as ZnFe2O4, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth. ZnFe2O4 is a reaction product of BaM and ZnO, as indicated by both TEM and XRD. After ex situ annealing the film in air at 800 °C, the ZnFe2O4 layer becomes thicker at the expense of BaM and ZnO. The lattice parameters of both BaM and ZnO decreased as annealing time increased.

Type
Articles
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Morisako, A., Matsumoto, M., and Naoe, M., IEEE Trans. Magn. 22, 1146 (1986).CrossRefGoogle Scholar
2Speliotis, D.E., IEEE Trans. Magn. 23, 3143 (1987).CrossRefGoogle Scholar
3Hylton, T. L., Parker, M. A., Ullah, M., Coffey, K. R., and Howard, J. K., J. Appl. Phys. 75, 5960 (1994).CrossRefGoogle Scholar
4Rosenblum, S. S., Hayashi, H., Li, J., and Sinclair, R., IEEE Trans. Magn. 30, 4047 (1994).CrossRefGoogle Scholar
5Li, J., Gür, T.M., Sinclair, R., Rosenblum, S.S., and Hayashi, H., J. Mater. Res. 9, 1499 (1994).CrossRefGoogle Scholar
6Naoe, M., Hosunama, S., Hoshi, Y., and Yamanaka, S., IEEE Trans. Magn. 17, 3184 (1981).CrossRefGoogle Scholar
7Yuan, M.S., Glass, H.L., and Adkins, L.R., Appl. Phys. Lett. 53, 341 (1988).CrossRefGoogle Scholar
8Hylton, T.L., Parker, M.A., and Howard, J.K., Appl. Phys. Lett. 61, 867 (1992).CrossRefGoogle Scholar
9Lacroix, , Gerard, P., Marest, G., and Dupuy, M., J. Appl. Phys. 69, 4770 (1991).CrossRefGoogle Scholar
10Matsuoka, M., Naoe, M., and Hoshi, Y., IEEE Trans. Magn. 21, 1474 (1985).CrossRefGoogle Scholar
11Bravman, J. C. and Sinclair, R., J. Electron Microscopy Technique 1, 53 (1984).CrossRefGoogle Scholar
12Glass, J.L. and Liaw, J.H.W., J. Appl. Phys. 49, 1578 (1978).CrossRefGoogle Scholar
13Morisako, A., Matsumoto, M., and Naoe, M., J. Magn. Magn. Mater. 54–57, 1657 (1986).CrossRefGoogle Scholar
14Matsuoka, M., Matsuda, Y., Hoshi, Y., and Naoe, M., J. Magn. Magn. Mater. 54–57, 1603 (1986).CrossRefGoogle Scholar
15Gorter, E.W., Philips Res. Rep., 9, 295 and 403 (1954).Google Scholar
16Wohlfarth, E. P., Ferromagnetic Materials (North-Holland, Amsterdam, 1982), Vol. 3, p. 320ff.Google Scholar