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Radiation damage evolution and its relation with dopant distribution during self-annealing implantation of As in silicon

Published online by Cambridge University Press:  31 January 2011

G. Lulli ,
P.G. Merli ,
A. Migliori ,
G. Brusatin ,
A.V. Drigo ,
C. Gerardi  and
A. Guerrieri
G. Lulli
Affiliation:
CNR-Istituto LAMEL, Via de'Castagnoli 1-40126 Bologna, Italy
P.G. Merli
Affiliation:
CNR-Istituto LAMEL, Via de'Castagnoli 1-40126 Bologna, Italy
A. Migliori
Affiliation:
CNR-Istituto LAMEL, Via de'Castagnoli 1-40126 Bologna, Italy
G. Brusatin
Affiliation:
Dipartimento di Fisica ‘G. Galilei’, GNSM-CISM, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
A.V. Drigo
Affiliation:
Dipartimento di Fisica ‘G. Galilei’, GNSM-CISM, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
C. Gerardi
Affiliation:
Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali, CNRSM, Via Marconi 147, 72023 Mesagne, Italy
A. Guerrieri
Affiliation:
Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali, CNRSM, Via Marconi 147, 72023 Mesagne, Italy
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Abstract

The evolution of radiation damage and of dopant profiles in Si samples subjected to self-annealing implantation with 160 keV As+ ions, under various transient heating conditions, depending on the beam current density, has been investigated. For temperatures in excess of 880 °C, the formation of voids is evidenced by Transmission Electron Microscopy observations. They are located in a layer extending from the surface over a depth of about 0.8 of the ion projected range, Rp (≃110 nm), while extended interstitial-type defects are observed in the region below. With increasing temperature (due to increasing beam power density and/or irradiation time), voids tend to anneal in the near surface region, while they survive and grow in a region about 40 nm thick, centered at a depth of about 50 nm, where an anomalous peak in the dopant profile is developed. The annealing of the extended interstitial-type defects at depths ≥Rp, which becomes appreciable for T ≥ 1050 °C, is coupled to a large enhancement of dopant diffusivity in the same region. It is argued that the local vacancy supersaturation, which leads to void formation, and the corresponding interstitial excess in the deeper region, which leads to extended defect formation, are a natural consequence of the collision kinetics of the displacement process, as suggested by Monte Carlo simulations reported in the literature. The evolution of damage and the anomalies in the redistribution of dopant, observed by increasing the temperature, are described as the result of the increase in the population of mobile point defects and of their influence on the mechanism of As diffusion in the different regions of the implanted layer.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 6 , June 1992 , pp. 1413 - 1422
Copyright
Copyright © Materials Research Society 1992

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References

1.Prussin, S., Margolese, D. I., and Tauber, R. N., J. Appl. Phys. 54, 2316 (1983).CrossRefGoogle Scholar
2.Morehead, F. F., Jr., and Crowder, B. L., Radiat. Eff. 6, 27 (1970).CrossRefGoogle Scholar
3.Linnros, J., Svensson, B., and Holmén, G., Phys. Rev. B 30, 3629 (1984).CrossRefGoogle Scholar
4.Elliman, R. G., Johnson, S. T., Pogany, A. P., and Williams, J. S., Nucl. Instrum. Methods B 7/8, 310 (1985).CrossRefGoogle Scholar
5.Tamura, M., Yagi, K., Sakudo, N., Tokiguti, K., and Tokuyama, T., in Int. Conf. on Ion Beam Modification of Materials, edited by Gyulai, T., Lohner, T., and Pasztor, E. (Central Research Institute for Physics, Budapest, 1978), p. 515.Google Scholar
6.Merli, P. G. and Zignani, F., Radiat. Eff. Lett. 50, 115 (1980).CrossRefGoogle Scholar
7.Komarov, F. F. and Novikov, A. P., Phys. Status Solidi A 112, 273 (1989).CrossRefGoogle Scholar
8.Berti, M., Drigo, A. V., Lulli, G., Merli, P. G., and Antisari, M. Vittori, Phys. Status Solidi A 94, 95 (1986).CrossRefGoogle Scholar
9.Berti, M., Drigo, A. V., Lulli, G., Merli, P. G., and Antisari, M. Vittori, Phys. Status Solidi A 97, 77 (1986).CrossRefGoogle Scholar
10.Cannavó, S., Ferla, A. La, Rimini, E., Ferla, G., and Gandolfi, L., J. Appl. Phys. 59, 4038 (1986).CrossRefGoogle Scholar
11.Berti, M., Drigo, A. V., Lotti, R., Lulli, G., and Merli, P. G., in Processing and Characterization of Materials Using Ion Beams, edited by Rehn, L. E., Greene, J., and Smidt, F. A. (Mater. Res. Soc. Symp. Proc. 128, Pittsburgh, PA, 1989), p. 569.Google Scholar
12.Komarov, F. F., Novikov, A. P., Kotov, E. V., and Podlipko, E. A., Phys. Status Solidi A 112, 323 (1989).CrossRefGoogle Scholar
13.Lulli, G., Merli, P. G., Rizzoli, R., Berti, M., and Drigo, A. V., J. Appl. Phys. 66, 2940 (1989).CrossRefGoogle Scholar
14.Gabilli, E., Lotti, R., Merli, P. G., Nipoti, R., and Ostoja, P., Appl. Phys. Lett. 41, 967 (1982).CrossRefGoogle Scholar
15.Lulli, G., Merli, P. G., Migliori, A., Matteucci, G., and Stanghellini, M., J. Appl. Phys. 68, 2708 (1990).CrossRefGoogle Scholar
16.Ziegler, J. F., Biersack, J. P., and Littmark, U., The Stopping and Range of Ions in Solids (Pergamon Press, New York, 1985).Google Scholar
17.Ho, C. P., Plummer, D., Hansen, S. E., and Dutton, R. W., IEEE Trans. Electron Devices ED-30, 1438 (1983).CrossRefGoogle Scholar
18.Mazzone, A. M., Phys. Status Solidi A 95, 149 (1986).CrossRefGoogle Scholar
19.Giles, M. D., J. Electrochem. Soc. 138, 1160 (1991).CrossRefGoogle Scholar
20.Solmi, S., Cembali, F., Fabbri, R., Servidori, M., and Canteri, R., Appl. Phys. A 48, 255 (1989).CrossRefGoogle Scholar
21.Holland, O. W. and White, C. W., Nucl. Instrum. Methods 59/60, 353 (1991).CrossRefGoogle Scholar
22.Orlowski, M., Appl. Phys. Lett. 58, 1479 (1991).CrossRefGoogle Scholar
23.Loualiche, S., Lucas, C., Baruch, P., Gailliard, J. P., and Pflster, J. C., Phys. Status Solidi A 69, 663 (1982).CrossRefGoogle Scholar
24.Holldack, K., Kerkow, H., and Frentrup, W., Phys. Status Solidi A 94, 357 (1986).CrossRefGoogle Scholar