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Preparation and characterization of sputtered TiB2 films

Published online by Cambridge University Press:  31 January 2011

Wieslaw A. Zdaniewski ,
Joseph Wu ,
Subhash C. Gujrathi  and
Kenneth Oxorn
Wieslaw A. Zdaniewski
Affiliation:
New Business Research, Engelhard Corporation, Edison, New Jersey 08818
Joseph Wu
Affiliation:
New Business Research, Engelhard Corporation, Edison, New Jersey 08818
Subhash C. Gujrathi
Affiliation:
Laboratoire de Physique Nucléaire, Université de Montréal, C.P. 6128, Succursale A, Montréal, Québec, Canada H3C 3J7
Kenneth Oxorn
Affiliation:
Laboratoire de Physique Nucléaire, Université de Montréal, C.P. 6128, Succursale A, Montréal, Québec, Canada H3C 3J7
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Abstract

Smooth, continuous TiB2 films were deposited on TiB2−AlN composites and Si substrates by sputtering in high vacuum. Excellent adhesion between films and substrates was indicated; no film delamination was induced by Vickers indentation at high loads. Analyses by secondary ion mass and x-ray photoelectron spectroscopies showed that the films were of high purity and contained H, C, O, N, and Na elements as trace impurities. Quantitative depth profile by the elastic recoil detection (ERD) nuclear scattering technique using 30 MeV 35Cl beam revealed that the Ti/B atomic ratio was very close to 0.5 while the 10B/11B isotopic ratio was 0.250.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 5 , May 1991 , pp. 1066 - 1072
Copyright
Copyright © Materials Research Society 1991

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