Hostname: page-component-77c89778f8-vpsfw Total loading time: 0 Render date: 2024-07-18T17:29:48.203Z Has data issue: false hasContentIssue false

Order-disorder in A2M3+M5+O6 perovskites

Published online by Cambridge University Press:  03 March 2011

P. Woodward
Affiliation:
Department of Chemistry, Oregon State University, Corvallis, Oregon 97331–4003
R-D. Hoffmann
Affiliation:
Department of Chemistry, Oregon State University, Corvallis, Oregon 97331–4003
A.W. Sleight
Affiliation:
Department of Chemistry, Oregon State University, Corvallis, Oregon 97331–4003
Get access

Abstract

Using x-ray and neutron diffraction data, the degree of order of the octahedral site cations has been determined for the perovskites Sr2AlNbO6 and Sr2AlTaO6, which have been prepared by several different methods and annealed at temperatures up to 1690 °C. The degree of order generally increases with increasing synthesis temperature. The amount of cation ordering is, therefore, primarily controlled by kinetic processes and not by thermodynamic equilibrium considerations. Increased order obtained with increased heating time confirms this general kinetic limitation on the degree of order. However, annealing Sr2AlNbO6 in the highest temperature region resulted in some decrease in order, presumably due to thermodynamic considerations. The cubic edge of both compounds decreases significantly with increasing order. Ordered domains are separated by antiphase boundaries which occur in high concentrations. The cubic cell edge within the ordered domains is significantly smaller than the overall cell edge when the concentration of antiphase boundaries is high. The antiphase boundaries cause significant lattice strain which generally decreases as the concentration of antiphase boundaries decreases. Results on other A2M3+M5+O6 systems are briefly presented.

Type
Articles
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Newnham, R. E., Chemistry of Electronic Ceramic Materials, NIST Spec. Pub. #804 (1991), p. 39.Google Scholar
2Rosenfeld, H. D., Egami, T., and Bhalla, A., Chemistry of Electronic Ceramic Materials, NIST Spec. Pub. #804 (1991), p. 93.Google Scholar
3Rosenfeld, H. D., Egami, T., and Bhalla, A, IEEE Transactions onUltrasonics, Ferroelectrics, and Frequency Control 38, 559 (1991).CrossRefGoogle Scholar
4Randall, C. A., Bhalla, A. S., Shrout, T. R., and Cross, L. E., J. Mater. Res. 5, 829 (1990).CrossRefGoogle Scholar
5Zang, Z. C., Caranoni, C., Siny, I., Hihoul, G., and Boulesteix, C., J. Solid State Chem. 89, 308 (1990).Google Scholar
6Sleight, A. W., Thesis, Dissertation Abstracts 24, 64-3565 (1964); University of Connecticut (1963).Google Scholar
7Goodenough, J. B. and Longo, J. M., Landolt-Bomstein 4a, 126 (1970).Google Scholar
8Brandle, CD. and Fratello, V.J., J. Mater. Res. 5, 2160 (1990).CrossRefGoogle Scholar
9Cross, L. E. and Roy, R., 3rd Annual DARPA Workshop on High Temperature Superconductivity, Seattle, WA (1991).Google Scholar
10Fahey, R. E., Strauss, A. J., and Anderson, A. C., J. Cryst. Growth 128, 672 (1993).CrossRefGoogle Scholar
11Han, B., Neumayer, D., Goodreau, B. H., Marks, T. J., Zhang, H., and Dravid, V. P., Chem. Mater. 6, 18 (1994).CrossRefGoogle Scholar
12Findikoglu, A. T., Doughty, C., Bhattacharya, S., Li, Qi, Xi, X. X., Venkatesan, T., Fahey, R. E., Strauss, A. J., and Phillips, J. M., Appl. Phys. Lett. 61 (14), 1718 (1992).CrossRefGoogle Scholar
13Galasso, F., Katz, L., and Ward, R., J. Am. Chem. Soc. 81, 820 (1959).CrossRefGoogle Scholar
14Nomura, S. and Nakagawa, T., J. Phys. Soc. Jpn. 30, 491 (1971).CrossRefGoogle Scholar
15Galasso, F. S., Structure, Properties and Preparation of Perovskite-Type Compounds (Pergamon Press, Oxford, 1969).Google Scholar
16Williamson, G. K. and Hall, W. H., Acta Metall. 1, 22 (1953).CrossRefGoogle Scholar
17Galasso, F. S. and Katz, L., Acta Crystallogr. 14, 647 (1961).CrossRefGoogle Scholar
18The DiFFaX software is based on an algorithm described in Treacy, M. M. J., Newsam, J. M., and Deem, M. W., Proc. R. Soc. London A 433, 499 (1991).Google Scholar