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Nucleation and growth of oriented diamond on Si(100) by bias-assisted chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Mikka Nishitani-Gamo
Affiliation:
National Institute for Research in Inorganic Materials (NIRIM), 1-1 Namiki, Tsukuba, Ibaraki 305, Japan; Core Research for Evolutional Science and Technology (CREST) of Japan Science and Technology Corporation (JST), c/o NIRIM, Japan; and Toppan Printing Co., Ltd., Materials Research Laboratory, 4-2-3, Takanodai-Minami, Sugito, Saitama 345, Japan
Toshihiro Ando
Affiliation:
National Institute for Research in Inorganic Materials (NIRIM), 1-1 Namiki, Tsukuba, Ibaraki 305, Japan; and Core Research for Evolutional Science and Technology (CREST) of Japan Science and Technology Corporation (JST), c/o NIRIM, Japan
Kazuo Yamamoto
Affiliation:
National Institute for Research in Inorganic Materials (NIRIM), 1-1 Namiki, Tsukuba, Ibaraki 305, Japan
Paul A. Dennig
Affiliation:
National Institute for Research in Inorganic Materials (NIRIM), 1-1 Namiki, Tsukuba, Ibaraki 305, Japan
Yoichiro Sato
Affiliation:
National Institute for Research in Inorganic Materials (NIRIM), 1-1 Namiki, Tsukuba, Ibaraki 305, Japan
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Abstract

In order to clarify the effect of bias treatments on the highly oriented growth of diamond, we investigated the relation between the silicon surface morphology changes after applying a bias voltage, and the orientation of the diamond crystallites after growth. We report two major findings. First, a textured structure on the Si surface after the bias pretreatment was found to be a necessary but insufficient indicator for the subsequent growth of highly oriented diamond. Second, although bias pretreatments effectively enhance nucleation, we did not find a clear relationship between the nucleation density and the percentage of oriented crystallites. The highest nucleation densities resulted in randomly oriented films. We conclude that bias pretreatments affect the nucleation enhancement and the diamond orientation through different mechanisms.

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Articles
Copyright
Copyright © Materials Research Society 1997

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