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Microstructural and electrical property studies of Pb(Zr0.52Ti0.48)O3 films grown on p-InP (100) substrates by a radio-frequency magnetron-sputtering technique at low temperature

Published online by Cambridge University Press:  31 January 2011

T. W. Kim  and
Y. S. Yoon
T. W. Kim
Affiliation:
Department of Physics, Kwangwoon Univrsity, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea
Y. S. Yoon
Affiliation:
Thin Film Technology Research Center, Korea Institute of the Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea
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Pb(Zr0.52Ti0.48)O3 thin films were grown on p-InP (100) substrates by using radio-frequency magnetron-sputtering at a relatively low temperature (∼450 °C). X-ray diffraction measurements showed that the Pb(Zr0.52Ti0.48)O3 film layers grown on the InP substrates were polycrystalline, and Auger electron spectroscopy measurements indicated that the compositions of the as-grown films consisted of lead, zirconium, titanium, and oxygen. Transmission electron microscopy measurements showed that the grown Pb(Zr0.52Ti0.48)O3 was a polycrystalline layer with small domains and that the Pb(Zr0.52Ti0.48)O3/InP (100) heterointerface had no significant interdiffusion problem. Room-temperature current–voltage and capacitance–voltage (C–V) measurements clearly revealed a metal–insulator–semiconductor behavior for the Pb(Zr0.52Ti0.48)O3 insulator gates, and the interface state densities at the Pb(Zr0.52Ti0.48)O3/p-InP interfaces, as determined from the C–V measurements, were approximately low 1011 eV−1 cm−2 at an energy of about 0.6 eV below the conduction-band edge. The dielectric constant of the Pb(Zr0.52Ti0.48)O3 thin film, as determined from the C–V measurements, was as large as 907.2. These results indicate that the Pb(Zr0.52Ti0.48)O3 layers grown on p-InP (100) substrates at low temperatures hold promise for potential high-density nonvolatile memories and high-speed infrared sensors based on InP substrates.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 1 , January 2000 , pp. 199 - 202
Copyright
Copyright © Materials Research Society 2000

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