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Lanthanide series doping effects in lead zirconate titanate (PLnZT) thin films

Published online by Cambridge University Press:  31 January 2011

Timothy J. Boyle*
Affiliation:
Sandia National Laboratories, Advanced Materials Laboratory, MS 1349, 1001 University Boulevard, SE, Albuquerque, New Mexico 87105
Paul G. Clem
Affiliation:
Sandia National Laboratories, Integrated Materials Research Laboratory, MS 1411, P.O. Box 5800, Albuquerque, New Mexico 87185
Bruce A. Tuttle
Affiliation:
Sandia National Laboratories, Integrated Materials Research Laboratory, MS 1411, P.O. Box 5800, Albuquerque, New Mexico 87185
Geoffrey L. Brennecka
Affiliation:
University of Missouri—Rolla, Ceramic Engineering Department 222 McNutt Hall, 1870 Miner Circle, Rolla, Missouri 65409
Jeffrey T. Dawley
Affiliation:
Sandia National Laboratories, Integrated Materials Research Laboratory, MS 1411, P.O. Box 5800, Albuquerque, New Mexico 87185
Mark A. Rodriguez
Affiliation:
Sandia National Laboratories, Integrated Materials Research Laboratory, MS 1411, P.O. Box 5800, Albuquerque, New Mexico 87185
Timothy D. Dunbar
Affiliation:
Sandia National Laboratories, Advanced Materials Laboratory, MS 1349, 1001 University Boulevard, SE, Albuquerque, New Mexico 87105
William F. Hammetter
Affiliation:
Sandia National Laboratories, Advanced Materials Laboratory, MS 1349, 1001 University Boulevard, SE, Albuquerque, New Mexico 87105
*
a)Address all correspondence to this author.
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Abstract

Lanthanide (Ln) doping of lead zirconate titanate (PLnZT 4/30/70) thin films was conducted to investigate effects on structural and electrical properties. Films were spin-coat deposited from precursor solutions made using a previously reported “basic route to PZT” chemistry. The remanent polarization (Pr), dielectric constant (ε), dielectric loss (tan δ), and lattice parameter values were obtained for each of the doped PLnZT films. Films doped with amphoteric cations (Tb, Dy, Y, and Ho) displayed high Pr values, square hysteresis loops, and enhanced fatigue resistance. Smaller radius Ln-doped films display an increased tendency toward (100) orientation in otherwise (111)-oriented films.

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Articles
Copyright
Copyright © Materials Research Society 2002

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References

1Ramesh, R., Aggarwal, S., and Auciello, O., Mater. Sci. Eng., R 32, 191 (2001).Google Scholar
2Muralt, P., Micromech. Microeng. 10, 136 (2000).Google Scholar
3Dimos, D., Annu. Rev. Mater. Sci. 25, 273 (1995).Google Scholar
4Kingon, A.I. and Steiffer, S.K., Curr. Opin. Solid State Mater. Sci. 4, 39 (1999).Google Scholar
5Polla, D.L. and Francis, L.F., Annu. Rev. Mater. Sci. 28, 563 (1998).Google Scholar
6Jaffe, B., Cook, W.R., and Jaffe, H., Piezoelectric Ceramics (Academic Press, San Diego, CA, 1971), Chapters 5 and 7.Google Scholar
7Warren, W.L., Dimos, D., Pike, G.E., Tuttle, B.A., Raymond, M.V., Ramesh, R., and Evans, J.T., Appl. Phys. Lett. 67, 866 (1995).Google Scholar
8Hardtl, K.H. and Hennings, D., J. Am. Ceram. Soc. 55, 230 (1972).Google Scholar
9Gonnard, P. and Troccas, M., J. Solid State Chem. 23, 321 (1978).Google Scholar
10Troccazs, M., Gonnard, P., and Eyraud, L., Ferroelectrics 22, 871 (1978).Google Scholar
11Park, H.B., Park, C.Y., Hong, Y.S., Kim, K., and Kim, S.J., J. Am. Ceram. Soc. 82, 94 (1999).Google Scholar
12Majumder, S.G., Mohapatra, Y.N., and Agrawal, D.C., J. Mater. Sci. 32, 2141 (1997).Google Scholar
13Chang, J-F. and Desu, S.B., J. Mater. Res. 9, 955 (1994).Google Scholar
14Yoon, S-J., Kang, H-W., Kucheiko, S.I., Kim, H-J., Jung, H-J., Lee, D-K., and Ahn, H-K., J. Am. Ceram. Soc. 81, 2473 (1998).Google Scholar
15Calzada, M.L., Sierera, R., Ricote, J., and Pardo, L., J. Mater. Chem. 8, 111 (1998).Google Scholar
16Boyle, T.J., U.S. Patent No. US5858323 (January 1999).Google Scholar
17Boyle, T.J. and Al-Shareef, H.N., J. Mater. Sci. 32, 2263 (1997).Google Scholar
18Goldschmidt, V.M., Skr. Nor. Vidensk.-Akad., 1: Mat.-Naturvidensk. Kl. 2, 8 (1926).Google Scholar
19Akhtar, M.J., Akhtar, Z., Jackson, R.A., and Catlow, C.R.A., J. Am. Ceram. Soc. 78, 421 (1995).Google Scholar
20Sharma, H.D., Govindan, A., Goel, T.C., Pillai, P.K.C., and Pramila, C., J. Mater. Sci. Lett. 15, 1424 (1996).Google Scholar
21Langjahr, P.A., Lange, F.F., Wagner, T., and Ruhle, M., Acta Mater. 46, 773 (1998).Google Scholar
22Shannon, R.D., Acta Crystallogr. A32, 751 (1976).Google Scholar
23Tsur, Y., Hitomi, , Scrymgeour, A.I., and Randall, C.A., Jpn. J. Appl. Phys., Part I 40, 255 (2001).Google Scholar
24Bureau, B., Silly, G., and Buzare, J.Y., J. Phys. Chem. Solids 59, 951 (1998).Google Scholar
25Wertz, J.E. and Bolton, J.R., Electron Spin Resonance: Elementary Theory and Practical Applications (Chapman & Hall, New York, 1986).Google Scholar
26Abdulsabirov, Y.R., Falin, M.L., Fazlizhanov, I.I., Kazakov, B.N., Korableva, S.L., Ibragimov, I.R., Safiullin, G.M., and Yakovleva, Z., Appl. Magn. Reson. 5, 377 (1993).Google Scholar
27Possenriede, E., Schirmer, O.F., and Godefroy, G., Phys. Status Solidi B 161, K55 (1990).Google Scholar
28Iton, L.E. and Turkevich, J., J. Phys. Chem. 81, 435 (1977).Google Scholar
29Dunbar, T.D., Warren, W.L., Clem, P.G., Tuttle, B.A., Randal, C.A., and Tsur, Y. (unpublished results).Google Scholar
30Brodbeck, C.M. and Iton, L.E., J. Chem. Phys. 83, 4285 (1985).Google Scholar
31Lakeman, C.D.E., Xu, S., and Payne, D.A., J. Mater. Res. 10, 2042 (1995).Google Scholar
32Tuttle, B.A., Headly, T.J., Bunker, B.C., Schwartz, R.W., Zender, T.J., Hernandez, C.L., Goodnow, D.C., Tissot, R.J., Michael, J., and Carim, A.H., J. Mater. Res. 7, 1876 (1992).Google Scholar
33Haertling, G.H. and Land, C.E., J. Am. Ceram. Soc. 54, 1 (1971).Google Scholar
34Warren, W.L., Dimos, D., Tutle, B.A., and Smyth, D.M., J. Am. Ceram. Soc. 77, 2753 (1994).Google Scholar
35Mizuno, Y., Okino, Y., Kohzu, N., Chazono, H., and Kishi, H., J. Appl. Phys. 37, 5227 (1998).Google Scholar
36Al-Shareef, H.N., Dimos, D., Warren, W.L., and Tuttle, B.A., Integr. Ferroelectr. 15, 77 (1997).Google Scholar