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The kinetics of indium/amorphous-selenium multilayer thin film reactions

Published online by Cambridge University Press:  31 January 2011

K. Lu ,
M. L. Sui ,
J. H. Perepezko  and
B. Lanning
K. Lu
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706
M. L. Sui
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706
J. H. Perepezko
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706
B. Lanning
Affiliation:
Lockheed Martin Aerospace, Littleton, Colorado 80127
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Abstract

The reaction kinetics in vapor-deposited indium/amorphous-selenium (a-Se) multilayer thin films were studied using differential scanning calorimetry (DSC), x-ray diffraction (XRD), and transmission electron microscopy (TEM). A number of reactions were observed upon heating with characteristic temperatures which were found to be independent of the multilayer modulation wavelength. The initial interface reaction between In and a-Se is the formation of an In2Se phase. Kinetic analyses of the In2Se formation process combined with TEM observations indicated that interface reaction is characterized by the two-dimensional growth of pre-existing In2Se regions formed during deposition to impingement in the plane of the original In/a-Se interface. The change of the density of In2Se grains with temperature was analyzed in terms of the derived kinetic parameters, which is consistent with TEM observations and the heat release measurements.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 3 , March 1999 , pp. 771 - 779
Copyright
Copyright © Materials Research Society 1999

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