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Isothermal Capacitance Transient Spectroscopy for Deep Levels in Co- and Mn-doped ZnO Single Crystals

Published online by Cambridge University Press:  31 January 2011

Naoki Ohashi
Affiliation:
Advanced Materials Laboratory,b)National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
Junzo Tanaka
Affiliation:
Advanced Materials Laboratory,b)National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
Takeshi Ohgaki
Affiliation:
Advanced Materials Laboratory,b)National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
Hajime Haneda
Affiliation:
Advanced Materials Laboratory,b)National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
Mio Ozawa
Affiliation:
Department of Metallurgy and Ceramic Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro, Tokyo 152–8552, Japan
Takaaki Tsurumi
Affiliation:
Department of Metallurgy and Ceramic Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro, Tokyo 152–8552, Japan
Corresponding
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Abstract

Deep donor levels in ZnO single crystals doped with transition metal (TM; Co or Mn) were characterized by isothermal capacitance transient spectroscopy (ICTS) applied to ZnO-based Schottky junctions, Au/ZnO (0001) or Ag/ZnO (0001). The barrier height at the junction and donor concentration was not influenced by TM. A deep donor level at 0.28 eV was detected by ICTS; however, its energy dispersion and concentration was composition independent. The effect of doping with TM was found in the magnitude of leakage current; in other words, the leakage current at the Au/ZnO:Mn junction was lower than the other junctions on undoped or Co-doped crystals.

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Copyright © Materials Research Society 2002

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Isothermal Capacitance Transient Spectroscopy for Deep Levels in Co- and Mn-doped ZnO Single Crystals
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