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Interaction of a 10 eV silicon beam with the Si(111) surface: A molecular dynamics study

Published online by Cambridge University Press:  31 January 2011

Brian W. Dodson  and
Paul A. Taylor
Brian W. Dodson
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
Paul A. Taylor
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
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Abstract

The interaction of a low-energy silicon beam with a silicon substrate has been simulated. The combined effects of vibrational lattice excitation and of covalent binding have been included for the first time by using a molecular dynamics technique and an empirical potential that accurately describes the covalent Si–Si interactions. A 10 eV silicon beam was directed normal to a silicon (111) substrate. Sticking ratio, penetration depth, substrate structure, and vibrational excitation of the substrate are quantitatively determined. The special features of such low-energy beam deposition relative to thermal deposition processes are discussed.

Type
Materials Communications
Information
Journal of Materials Research , Volume 2 , Issue 6 , December 1987 , pp. 805 - 808
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1See, for example, Herbots, N., Appleton, B. R., Noggle, T. S., Pennycook, S. J., Zuhr, R. A., and Zehner, D. M., in Semiconductor-Based Heterojunotions, edited by Green, M. L., Baglin, J. E. E., Chin, G. Y., Deckman, H. W., Mayo, W., and Narasinham, D. (The Metallurgical Society, Warrendale, PA, 1986).Google Scholar
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