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Fundamental issues in heteroepitaxy—A Department of Energy, Council on Materials Science Panel Report*

Published online by Cambridge University Press:  31 January 2011

Ernst G. Bauer
Affiliation:
Tech. Universität Clausthal, Clausthal-Zellerfeld, West Germany
Brian W. Dodson
Affiliation:
Sandia National Laboratories, Division 1153, Albuquerque, New Mexico 87185-5800
Daniel J. Ehrlich
Affiliation:
Massachusetts Institute of Technology Lincoln Laboratory, P.O. Box 73, Lexington, Massachusetts 02173
Leonard C. Feldman
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974-2070
C. Peter Flynn
Affiliation:
University of Illinois at Urbana-Champaign, Department of Physics, 1110 West Green Street, Urbana, Illinois 61801
Michael W. Geis
Affiliation:
Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood Street, Lexington, Massachusetts 02173
James P. Harbison
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701-7040
Richard J. Matyi
Affiliation:
University of Wisconsin, Department of Metallurgical and Mineral Engineering, 1509 University Avenue, Madison, Wisconsin 53706
Paul S. Peercy
Affiliation:
Sandia National Laboratories, Department 1140, Albuquerque, New Mexico 87185-5800
Pierre M. Petroff
Affiliation:
University of California-Santa Barbara, Engineering Materials Department, Santa Barbara, California 93106
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974-2070
Gerald B. Stringfellow
Affiliation:
University of Utah, Department of Materials Science, Salt Lake City, Utah 84112
Andrew Zangwill
Affiliation:
Georgia Institute of Technology, School of Physics, Atlanta, Georgia 30332
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Abstract

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Materials Reports
Copyright
Copyright © Materials Research Society 1990

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References

1Frankenheim, M.L., Ann. Phys. 37, 516 (1839).Google Scholar
2Royer, L., Bull. Soc. Fr. Mineral. Crist. 51, 7 (1928).Google Scholar
3Seifert, H., in Structure and Properties of Solid Surfaces, edited by Gomer, R. and Smith, C. S. (Univ. of Chicago Press, 1953), p. 318.Google Scholar
4Frank, F. C. and van der Merwe, J. H., Proc. Roy. Soc. A198, 216 (1949).CrossRefGoogle Scholar
5Matthews, J.W., Epitaxial Growth (Academic Press, New York, 1975).Google Scholar
6Honjo, G. and Yagi, K., in Current Topics in Materials Science, edited by Kaldis, E. (North Holland, Amsterdam, 1980), p. 195.Google Scholar
7Dodson, B.W., Fritz, I. J., Picraux, S.T., and Tsao, J.Y., in Multilayers: Synthesis, Properties and Non-Electronic Applications, edited by Barbee, T.W., Jr., Spaepen, F., and Greer, L. (MRS, Pittsburgh, PA, 1988), p. 141.Google Scholar
8Bauer, E., Appl. Surf. Sci. 11/12, 479 (1982).CrossRefGoogle Scholar
9Kern, R., Lay, G. Le, and Metois, J. J., in Current Topics in Materials Science, edited by Kaldis, E. (North Holland, Amsterdam, 1979), p. 130.Google Scholar
10Vook, R.W., Int. Met. Rev. 27, 209 (1982).CrossRefGoogle Scholar
11Flynn, C.P., J. Phys. F18, L195 (1988); M.H. Yang and C.P. Flynn, Phys. Rev. Lett. 62, 2476 (1989).CrossRefGoogle Scholar
12Flynn, C. P., Proc. Acta Metall. Conf. on Metal-Ceramic Interfaces (Santa Barbara, CA, Jan. 1989), Acta Scripta (in press).Google Scholar
13Bauer, E., Krist, Z., 110, 372 (1958).CrossRefGoogle Scholar
14Bruinsma, R. and Zangwill, A., Europhys. Lett. 4, 729 (1987).CrossRefGoogle Scholar
15Grabow, M. H. and Gilmer, G. H., in Layered Structures and Epitaxy, edited by Gibson, J. M., Osbourn, G. C., and Tromp, R. M. (MRS, Pittsburgh, PA, 1986), p. 13.Google Scholar
16van der Merwe, J. H., J. Appl. Phys. 34, 117 (1963).CrossRefGoogle Scholar
17Dodson, B.W. and Taylor, P. A., Appl. Phys. Lett. 49, 642 (1986).CrossRefGoogle Scholar
18Woltersdorf, J., Appl. Surf. Sci. 11/12, 495 (1982).CrossRefGoogle Scholar
19Bean, J. C., Feldman, L.C., Fiory, A.T., Nakahara, S., and Robinson, I. K., J. Vac. Sci. Technol. A2, 436 (1984).CrossRefGoogle Scholar
20Peercy, P. S. and Osbourn, G. C., J. Metals 39, 14 (1986).Google Scholar
21Dodson, B.W. and Tsao, J.Y., Appl. Phys. Lett. 51, 1325 (1987).CrossRefGoogle Scholar
22Dodson, B.W. and Tsao, J.Y., in Ann. Rev. in Mater. Sci. 19, 419 (1989).CrossRefGoogle Scholar
23Tsao, J.Y., Dodson, B.W., Picraux, S.T., and Cornelison, D. M., Phys. Rev. Lett. 59, 2455 (1987).CrossRefGoogle Scholar
24Dodson, B.W. and Tsao, J.Y., Appl. Phys. Lett. 55, 1345 (1989).CrossRefGoogle Scholar
25Dodson, B.W., Hull, R., and Bean, J. C., Phys. Rev. Lett.(1990) (in press).Google Scholar
26Wood, D.M., Wei, S.H., and Zunger, A., Phys. Rev. B37, 1342 (1988).CrossRefGoogle Scholar
27Keating, P. N., Phys. Rev. 145, 637 (1966).CrossRefGoogle Scholar
28Wood, D. M. and Zunger, A., Phys. Rev. Lett. 61, 1501 (1988).CrossRefGoogle Scholar
29Jen, H.R., Cherng, M.J., and Stringfellow, G.B., Appl. Phys.Lett. 48, 1603 (1986).CrossRefGoogle Scholar
30Ihm, Y. E., Otsuka, N., Klem, J., and Morkoc, H., Appl. Phys. Lett. 51, 2013 (1987).CrossRefGoogle Scholar
31Jou, M.J., Cherng, Y.T., Jen, H. R., and Stringfellow, G.B., J. Cryst. Growth 93, 62 (1988).CrossRefGoogle Scholar
32Morrison, I. A., Kang, M. H., and Mele, E. J.,Phys. Rev. B39,1575 (1989).CrossRefGoogle Scholar
33Wang, Z. Q., Liu, S. H., Li, Y. S., Jona, F., and Marcus, P. M., Phys. Rev. B35, 9322 (1987).CrossRefGoogle Scholar
34Goodman, D.W., Houston, J. E., and Peden, C. H. F., Vac, J.. Sci. Technol. A5, 823 (1987).Google Scholar
35Moruzzi, V.L., Marcus, P.M., Schwarz, K., and Mohn, P., Phys. Rev. B34, 1784 (1986).CrossRefGoogle Scholar
36Brunisma, R. and Zangwill, A., J. Phys. (Paris) 47, 2055 (1986).CrossRefGoogle Scholar
37Dodson, B.W., Myers, D.R., Datye, A.K., Kaushik, V.S., Kendall, D.L., and Martinez-Tovar, B., Phys. Rev. Lett. 61, 2681 (1988).CrossRefGoogle Scholar
38Schowalter, L. J., Hall, E. L., Lewis, N., and Hashimoto, S., in Thin Films: Stresses and Mechanical Properties, edited by Bravman, J. C., Nix, W.D., Barnett, D.M., and Smith, D.A. (MRS, Pittsburgh, PA, 1989).Google Scholar
39Du, R. and Flynn, C. P. (preprint).Google Scholar
40Stillinger, F. H. and Weber, T. A., Phys. Rev. B31, 5262 (1985).CrossRefGoogle Scholar
41Baskes, M.I., Phys. Rev. Lett. 59, 2666 (1987).CrossRefGoogle Scholar
42Daw, M. S. and Baskes, M. I., Phys. Rev. B29, 6443 (1984).CrossRefGoogle Scholar
43Khor, K.E. and DasSarma, S.D., Phys. Rev. B36, 7733 (1987); S. Clarke and D. D. Vvedensky, J. Appl. Phys. 63, 2272 (1988).CrossRefGoogle Scholar
44Dodson, B.W., Phys. Rev. Lett. (1989) (in press).Google Scholar
45Madhukar, A. and Ghaisas, S.V., CRC Crit. Rev. in Solid State Mat. Sci. 14, 1 (1988).CrossRefGoogle Scholar
46Car, R. and Parinello, M., Phys. Rev. Lett. 55, 2471 (1985).CrossRefGoogle Scholar
47Eaglesham, D. J. and Kvam, E. P., Phil. Mag. A59, 1059 (1989).CrossRefGoogle Scholar
48Cox, H. M., Hummel, S. G., and Keramides, V. G., J. Cryst. Growth 79, 900 (1986); H. M. Cox, P. C. Morais, D. M. Huang, P. Bastos, T. J. Gmitter, L. Nazar, J. M. Worlock, E. Yablonovitch, and S. G. Hummel, in Gallium Arsenide and Related Compounds 1988, Inst. Phys. Conf. Ser. #96, 119 (1989).CrossRefGoogle Scholar
49Stringfellow, G. B., Organometallic Vapor Phase Epitaxy: Theory and Practice(Academic Press, Boston, MA, 1989).Google Scholar
50Plass, C., Heinecke, H., Kaiser, O., Lüth, H., and Balk, P., J. Cryst. Growth 88, 455 (1988).CrossRefGoogle Scholar
51Aspnes, D. E., Colas, E., Studna, A. A., Bhat, R., Koza, M. A., and Keramidas, V. G., Phys. Rev. Lett. 61, 2782 (1988); D. E. Aspnes, R. Bhat, E. Colas, V. G. Keramidas, M. A. Koza, and A. A. Studna, J. Vac. Sci. Technol. A7, 711 (1989); D. E. Aspnes, J.P. Harbison, A. A. Studna, and L.T. Florez, J. Vac. Sci. Technol. A6, 1327 (1987); D. E. Aspnes, R. Bhat, E. Codas, L.T. Florez, J.P. Harbison, M.K. Kelly, V.G. Keramidas, M.A. Koza, and A. A. Studna, SPIE Proc. 1037, 2 (1989).CrossRefGoogle Scholar
52Asai, H., J. Cryst. Growth 80, 425 (1987).CrossRefGoogle Scholar
53Kawai, H., Kaneko, K., and Watanabe, N., J. Appl. Phys. 56, 463 (1984).CrossRefGoogle Scholar
54Kajiwara, K., Kawai, H., Kaneko, K., and Watanabe, N., Jpn. J. Appl. Phys. 24, L85 (1985).CrossRefGoogle Scholar
55Bertolet, D. C., Hsu, J. K., and Lau, K. M., J. Appl. Phys. 62, 120 (1987).CrossRefGoogle Scholar
56Singh, J., Bajaj, K. K., Reynolds, D. C., Litton, C.W., Wu, P.Y., Masselink, W.T., Fischer, R., and Morkoc, H., J. Vac. Sci. Technol., B3, 1061 (1985).CrossRefGoogle Scholar
57Tsang, W.T. and Schubert, E. F., Appl. Phys. Lett. 49, 855 (1985).Google Scholar
58Ourmazd, A., in Proc. of US/Japan Seminar on Alloy Semiconductors, edited by Stringfellow, G. B. and Sasaki, A. (Elsevier, Amsterdam, 1989).Google Scholar
59Razeghi, M., Nagle, J., and Weisbuch, C., Inst. Phys. Conf. Ser. 0023 74, 379 (1985).Google Scholar
60Wang, T.Y., Fry, K.L., Persson, A., Reihlen, E.H., and Stringfellow, G. B., Appl. Phys. Lett. 52, 290 (1988).CrossRefGoogle Scholar
61Wang, T.Y., Fry, K.L., Persson, A., Reihlen, E.H., and Stringfellow, G. B., J. Appl. Phys. 63, 2674 (1988).CrossRefGoogle Scholar
62Stringfellow, G. B., Electron, J.. Mater. 17, 327 (1988).Google Scholar
63Kapon, E., Harbison, J. P., Yun, C. P., and Florez, L.T., Appl. Phys. Lett. 54, 304 (1989); H.P. Meier, E. Van Giesen, W. Walker, C. Harder, M. Krahl, and D. Bimberg, Appl. Phys. Lett. 54, 433 (1989).CrossRefGoogle Scholar
64Emerging Technologies for In Situ Processing, edited by Ehrlich, D. E. and Nguyen, V.T., NATO Advanced Science Institute Series, Series E: Applied Sciences No. 139 (Martius Nijhoff, Dordrecht, Boston, 1988).CrossRefGoogle Scholar
65Chen, P., Kim, J.Y., Madhukar, A., and Cho, N. M., J. Vac. Sci. Technol. B4, 890 (1986).CrossRefGoogle Scholar
66Neave, J. H., Dobson, P. J., Joyce, B. A., and Zhang, J., Appl. Phys. Lett. 47, 100 (1985).CrossRefGoogle Scholar
67Dingle, R., Stormer, H.L., Gossard, A. C., and Wiegmann, W., Appl. Phys. Lett. 33, 665 (1978).CrossRefGoogle Scholar
68Schubert, E. F. and Ploog, K., Jpn. J. Appl. Phys. 24, L608 (1985); C. E. C. Wood, G. Metzke, J. Berry, and L. F. Eastman, J. Appl. Phys. 51, 383 (1980).CrossRefGoogle Scholar
69Horikoshi, Y., Kawashima, M., and Yamaguchi, H., Jpn. J. Appl. Phys. 25, L868 (1986); Y. Horikoshi, M. Kawashima, and H. Yamaguchi, Jpn. J. Appl. Phys. 27, 169 (1988).CrossRefGoogle Scholar
70Gibbons, J.F., Gronet, C. M., and Williams, K.E., Appl. Phys. Lett. 47, 721 (1985).CrossRefGoogle Scholar
71Falks, P. C. and Beckers, I. J., Appl. Phys. Lett. 41, 167 (1982).Google Scholar
72Herbots, N., Appleton, B.R., Noggle, T. S., Zuhr, R.A., and Pennycook, S. J., Nucl. Inst. Methods B13, 250 (1986).CrossRefGoogle Scholar
73 See, e.g., Greene, J. E., CRC Critical Reviews of Solid State and Materials Science 11, 47 (1983).CrossRefGoogle Scholar
74Huang, T. C., Lim, G., Parmigiani, F., and Kay, E., J. Vac. Sci. Technol. A3, 2161 (1985).CrossRefGoogle Scholar
75Yu, L.S., Harper, J.M.E., Cuomo, J. J., and Smith, D.A., J. Vac. Sci. Technol. A4, 443 (1986).CrossRefGoogle Scholar
76Jorke, H., Herzog, H-J., and Kibbel, H., Appl. Phys. Lett. 47, 511 (1985).CrossRefGoogle Scholar
77Greene, J.E., J. Vac. Sci. Technol. 1, 229 (1983).CrossRefGoogle Scholar
78Herbots, N., Cullen, P., Pennycook, S.J., Appleton, B.R., Noggle, T.S., and Zuhr, R.A., Nucl. Instrum. and Meth. B. (in press).Google Scholar
79Tsao, J.Y., Chason, E., Horn, K. M., Brice, D. K., and Picraux, S.T., Nucl. Instr. and Meth. B39, 72 (1989).CrossRefGoogle Scholar
80Chason, E., Horn, K. M., Tsao, J.Y., and Picraux, S.T., Mater. Res. Soc. Symp. Proc. 128, 35 (1989).CrossRefGoogle Scholar
81Horn, K. M., Chason, E., Tsao, J.Y., and Picraux, S.T., Mater. Res. Soc. Symp. Proc. 131, 549 (MRS, Pittsburgh, PA, 1989).Google Scholar
82Bedair, S. M., Whisnant, J. K., Karam, N. H., Griffis, D., El-Masry, N. A., and Stadelmaier, H. H., J. Cryst. Growth 77, 229 (1986); S.M. Bedair, J.K. Whisnant, N.H. Karam, M.A. Tischler, and T. Katsuyana, Appl. Phys. Lett. 48, 174 (1986).CrossRefGoogle Scholar
83Doi, A., Aoyagi, Y., and Namba, S., Appl. Phys. Lett. 48, 787 (1986); A. Doi, Y. Aoyagi, and S. Namba, Appl. Phys. Lett. 49, 785 (1986).CrossRefGoogle Scholar
84Eden, J.G., Greene, J.E., Osmundsen, J.G., Lubben, D., Abele, C.C., Gorbutkin, S., and Desai, H. D., Mater. Res. Soc. Symp. Proc. 17, 185 (1983).CrossRefGoogle Scholar
85Ishitani, A., Oshita, Y., Tanigaki, K., and Takada, K., J. Appl. Phys. 61, 2224 (1987).CrossRefGoogle Scholar
86Kisker, D.W. and Feldman, R. D., Mater. Lett. 3, 485 (1985); D.W. Kisker and R.D. Feldman, J. Cryst. Growth 72, 102 (1985).CrossRefGoogle Scholar
87Roth, W., Fischer, M., Grundmann, D., Lückerath, R., Lüth, I.I., and Richter, W., J. Vac. Technol. 5, 1453 (1987).Google Scholar
88Gee, J. M., Hargis, P. J., Jr., Carr, M. J., Tallant, D. R., and Light, R.W., Mater. Res. Soc. Symp. Proc. 29, 15 (1984).CrossRefGoogle Scholar
89Nishida, S., Shiimito, T., Yamada, A., Karasawa, S., Konagai, M., and Takashashi, K., Appl. Phys. Lett. 49, 79 (1986).CrossRefGoogle Scholar
90Balk, T., Fischer, M., Grundmann, D., Lückerath, R., Lüth, I.I., and Richter, W., J. Vac. Sci. Technol. 5, 1453 (1987).CrossRefGoogle Scholar
91Donnelly, V. M., Brasen, D., Appelbaum, A., and Geva, M., J. Appl. Phys. 58, 2022 (1985); V.M. Donnelly, D. Braseu, A. Appelbaum, and M. Geva, J. Vac. Sci. Technol. A4, 716 (1986).CrossRefGoogle Scholar
92Irvine, S. J. C., Mullin, J. B., and Tunnicliffe, J., J. Cryst. Growth 68, 188 (1984); S.J.C. Irvine, J.B. Mullin, and J. Tunnicliffe, Chem. Phys. 39, 234 (1984); S.J.C. Irvine, J.B. Mullin, G.W. Blackmore, and O.D. Dosser, J. Vac. Technol. 83, 1450 (1985); S. J. C. Irvine, J. Geiss, J. S. Gough, G.W. Blackmore, A. Royle, J. B. Mullin, N. G. Chew, and A. G. Cullis, J. Cryst. Growth 77, 437 (1986).CrossRefGoogle Scholar
93Ahlgren, W. J., James, J. B., Ruth, R. P., Patten, E. A., and Stuedenmann, J. A., Mater. Res. Soc. Symp. Proc. 90, 405 (1987).CrossRefGoogle Scholar
94Dreifres, D. L., Kolbas, R. M., Harper, R.L., Tassitino, J.R., Hwang, S., and Schetzina, J. F., Appl. Phys. Lett. 53, 1279 (1988).CrossRefGoogle Scholar
95Maki, P. A. and Ehrlich, D. J., Appl. Phys. Lett. 55, 91 (1989).CrossRefGoogle Scholar
96Pfeiffer, L., Phillips, J. M., Smith, T. P., III, Augustoniak, W. M., and West, K.W., Appl. Phys. Lett. 46, 947 (1985); L. Pfeiffer, J. M. Phillips, K.E. Luther, K.W. West, J.L. Batstone, F.A. Stevie, and J. E. A. Maurits, Appl. Phys. Lett. 50, 466 (1987); N. Chaud, R. People, R.A. Baiocchi, K.W. Wecht, and A.Y. Cho, Appl. Phys. Lett. 49, 815 (1986).CrossRefGoogle Scholar
97Cerullo, M., Phillips, J.M., Anzlowar, M., Pfeiffer, L., Batstone, J.L., and Galiano, M., Mater. Res. Soc. Symp. Proc. 102, 835 (1988).Google Scholar
98Yablonovitch, E., Gmitter, T. J., Harbison, J. P., and Bhat, R., Appl. Phys. Lett. 51, 2222 (1987).CrossRefGoogle Scholar
99Myers, D. R., Klem, J. F., and Lott, J. A., Tech. Digest of the 1988 Intl. Electr. Devices Meeting (IEEE Publ. Services, New York, 1989), p. 704.Google Scholar
100Esaki, L. and Tsu, R., IBM J. Res. Dev., 61 (1970).Google Scholar
101Osbourn, G.C., J. Appl. Phys. 53, 1586 (1982).CrossRefGoogle Scholar
102Biefeld, R.M., J. Cryst. Growth 56, 382 (1982); R.M. Biefeld, G. C. Osbourn, P. L. Gourley, and I. J. Fritz, J. Electron. Mater. 12, 903 (1983).CrossRefGoogle Scholar
103Biefeld, R.M., Hills, C.R., and Lee, S.R., J. Cryst. Growth 91, 515 (1988).CrossRefGoogle Scholar
104Dodson, B.W., Appl. Phys. Lett. 53, 37 (1989).CrossRefGoogle Scholar
105Cibert, J., Petroff, P.M., Werder, D.J., Pearson, S.J., Gossard, A.C., and English, J. H., Appl. Phys. Lett. 49, 223 (1986).CrossRefGoogle Scholar
106Seo, K.S., Battacharia, P. K., Kothiyal, G. P., and Hong, S., Appl. Phys. Lett. 49, 15 (1986).CrossRefGoogle Scholar
107LeGoues, F. K., Iyer, S. S., Tu, K. N., and DeLage, S. L., Multilayers: Synthesis, Properties and Non-Electronic Applications (MRS, Pittsburgh, PA, 1988), p. 185.Google Scholar
108Stringfellow, G. B. and Greene, P. E., J. Phys. Chem. Solids 30, 1779 (1969).CrossRefGoogle Scholar
109Panish, M. B. and Ilegems, M., Progress in Solid State Chemistry, edited by Reiss, H. and McCaldin, J. O. (Pergamon Press, Oxford, 1972), Vol. 7, p. 39.Google Scholar
110Stringfellow, G. B., J. Cryst. Growth 27, 21 (1974).CrossRefGoogle Scholar
111Phillips, J.C. and Van Vechten, J. A., Phys. Rev. 22, 70 (1969).Google Scholar
112Phillips, J.C. and Van Vechten, J. A., Phys. Rev. B2, 2147 (1970).CrossRefGoogle Scholar
113Stringfellow, G.B., J. Cryst. Growth 68, 111 (1984).CrossRefGoogle Scholar
114deCremoux, B., Hirtz, P., and Ricciardi, J., Inst. Phys. Conf. Ser. 56, 115 (1981).Google Scholar
115Cherng, M. J., Stringfellow, G. B., and Cohen, R. M., Appl. Phys. Lett. 44, 677 (1984).CrossRefGoogle Scholar
116Stringfellow, G. B., Electron, J.. Mater. 11 5 (1982).Google Scholar
117Srivastava, G.P., Martins, J.L., and Zunger, A., Phys. Rev. B31, 2561 (1985).CrossRefGoogle Scholar
118Swalin, R. A., Thermodynamics of Solids (John Wiley and Sons, New York, 1972).Google Scholar
119Hume-Rothery, W., Electrons, Atoms, Metals, and Alloys (Dover, London, 1963), 3rd ed., Chap. 39. The first edition was published in 1948.Google Scholar
120Murgatroyd, J., Norman, A. G., and Booker, G. R., Mater. Res. Soc. Spring Meeting, Palo Alto, CA, April 1986.Google Scholar
121Ihm, Y. E., Otsuka, N., Klem, J., and Morkoc, H., Appl. Phys. Lett. 51, 2013 (1987).CrossRefGoogle Scholar
122Jen, H. R., Ma, K.Y., and Stringfellow, G. B., Appl. Phys. Lett. 54, 1154 (1989).CrossRefGoogle Scholar
123Jen, H. R., Cao, D.S., and Stringfellow, G.B., Appl. Phys. Lett. 54, 1890 (1989).CrossRefGoogle Scholar
124Stringfellow, G. B., in Proc. of US/Japan Seminar on Alloy Semiconductors, edited by Stringfellow, G. B. and Sasaki, A. (Elsevier, Amsterdam, 1989).Google Scholar
125Suzuki, T., Gomyo, A., and Iijima, S., J. Cryst. Growth 93, 396 (1988).CrossRefGoogle Scholar
126Bean, J. C., Sheng, T.T., Feldman, L.C., Fiory, A.T., and Lynch, R.T., Appl. Phys. Lett. 44, 103 (1984).CrossRefGoogle Scholar
127Kohama, Y., Fukada, Y., and Seki, M., Appl. Phys. Lett. 52, 380 (1988); D.J. Eaglesham, E. P. Kvam, D. M. Maher, C. J. Humphreys, G.S. Green, B. K. Tanner, and J. C. Bean, Appl. Phys. Lett. 53, 2083 (1988).CrossRefGoogle Scholar
128Hull, R., Bean, J.C., and Leibenguth, R.E., Mater. Res. Soc.Symp. Proc. 116, 505 (1988).CrossRefGoogle Scholar
129Froyen, S., Wood, S. M., and Zunger, A., Phys. Rev. B36, 4574 (1987).Google Scholar
130Pearsall, T. P., Bean, J. C., Hull, R., and Bonar, J. M., Proc. of the 3rd Int. Symp. on Si Molecular Beam Epitaxy, Meeting of the European Materials Research Society, June 1989 (to be published).Google Scholar
131 See, e.g., Proc. of the 2nd Int. Symp. on Silicon Molecular Beam Epitaxy, edited by Bean, J. C. and Showalter, L. J. (The Electrochemical Society, Pennington, NJ, 1988).Google Scholar
132Derjaguin, D.V, Spitsyn, B.V., Goridetsky, A. E., Zakharov, A. P., Bouilov, L.L., and Sleksenko, A.E., J. Cryst. Growth 31, 44 (1975).CrossRefGoogle Scholar
133Kamo, M., Sato, Y., Matsumoto, S., and Setaka, N., J. Cryst. Growth 62, 642 (1983).CrossRefGoogle Scholar
134Matsumoto, S., Sato, Y., Kamo, N., and Setaka, N., Jpn. J. Appl. Phys. 21, L183 (1982).CrossRefGoogle Scholar
135Geis, M.W., Rathman, D.D., Zayhowski, J. J., Smythe, P., Smith, D. K., and Ditmer, G. A., in Diamond and Diamond-Like Materials Synthesis, edited by Johnson, G. H., Badzian, A. R., and Geis, M.W. (Materials Research Society, Pittsburgh, PA, 1988), p. 115.Google Scholar
136Gourley, P. L., Brennan, T. M., Hammons, B.E., Corzine, S.W., Geels, G.S., Yan, R.H., Scott, J.W., and Coldren, L.A., Appl. Phys. Lett. 54, 1209 (1989).CrossRefGoogle Scholar
137Gourley, P.L., Biefeld, R.M., Drummond, T.J., and Zipperian, T.E., SPIE 792, Quantum Wells and Microstructures, 178 (1987).Google Scholar
138Reno, J. L., Gourley, P. L., Montfroy, G., and Faurie, J. P., Appl. Phys. Lett. 53, 1747 (1989).CrossRefGoogle Scholar
139Kroemer, H., J. Cryst. Growth 81, 193 (1987).CrossRefGoogle Scholar
140Fischer, R. J., Chand, N., Kopp, W. F., Morkoc, H., Erickson, L. P., and Youngman, P., Appl. Phys. Lett. 47, 397 (1985).CrossRefGoogle Scholar
141Hull, R., Fischer-Colbrie, A., Rosner, S. J., Koch, S. M. and Harris, J. S., Appl. Phys. Lett. 51, 1723 (1987).CrossRefGoogle Scholar
142Sakamoto, T. and Hashiguchi, G., Jpn. J. Appl. Phys. 25, L57 (1986).Google Scholar
143Lucas, N., Zabel, H., Morkoc, H., and Unlu, H., Appl. Phys. Lett. 52, 2117 (1988).CrossRefGoogle Scholar
144Lo, Y. H., Wu, M. C., Lee, H., Wang, S., and Lilienthal-Weber, Z., Appl. Phys. Lett. 52, 1386 (1988).CrossRefGoogle Scholar
145Frank, F. C. and van der Merwe, J. H., Proc. R. Soc. London A198, 205 (1949); J.W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).CrossRefGoogle Scholar
146Nishimura, T., Mizuguchi, K., Hayafuji, N., and Murotani, T., Jpn. J. Appl. Phys. 26, L1141 (1987).CrossRefGoogle Scholar
147Lee, J.W., Proc. 1986 Int. Symp. on GaAs and Related Compounds, Inst. Phys. Conf. Ser. 83, 111 (1987).Google Scholar
148Aspnes, D.E. and Ihm, J., Phys. Rev. Lett. 57, 3054 (1986).CrossRefGoogle Scholar
149Griffith, J. E., Kubby, J. A., Wierenga, P. E., and Kochanski, G. P., Mater. Res. Soc. Symp. Proc. 116, 105 (1988).CrossRefGoogle Scholar
150Rosner, S. J., Koch, S. M., and Harris, J. S., Appl. Phys. Lett. 49, 1764 1986).CrossRefGoogle Scholar
151El-Masry, N., Tarn, J. C. L., Humphreys, T.P., Hamaguchi, N., Karem, N. H., and Bedair, S. M., Appl. Phys. Lett. 51, 1608 (1987); N. A. El-Masry, J. C. Tarn, and N. H. Karam, J. Appl. Phys. 64, 3672 (1988).CrossRefGoogle Scholar
152Lee, J.W., Shichijo, J., Tsai, H. L., and Mayti, R. J., Appl. Phys. Lett. 50, 31 (1987).CrossRefGoogle Scholar
153Prinz, G. A., Phys. Rev. Lett. 54, 1051 (1985); Y.U. Idzerda, W.T. Elam, B.T. Jonker, and G.A. Prinz, Phys. Rev. Lett. 62, 2480 (1989).CrossRefGoogle Scholar
154Guivarc'h, A., Guerin, R., and Secoue, M., Electron. Lett. 23, 1004 (1987).CrossRefGoogle Scholar
155Palmstrøm, C. J.Garrison, K., Fimland, B-O., and Harbison, J. P., Electronic Materials Conference, Boulder, CO, June 2224, 1988; C. J. Palmstrøm, K. Garrison, B-O. Fimland, T. Sands, and R. A. Bartynski, in Mater. Res. Soc. Symp. Proc. on Advances in Materials, Processing and Devices in III–V Compound Semiconductors, Boston, MA, November 28–December 1, 1988); T. Sands, J. P. Harbison, W. K. Chan, S.A. Schwarz, C. C. Chang, C.J. Palmstrøm, and V. G. Keramidas, Appl. Phys. Lett. 52, 1216 (1988).Google Scholar
156Harbison, J. P., Sands, T., Tabatabaie, N., Chan, W. K., Florez, L.T., and Keramidas, V. G., Appl. Phys. Lett. 53, 1717 (1988).CrossRefGoogle Scholar
157Tabatabaie, N., Sands, T., Harbison, J. P., Gilchrist, H.L., and Keramidas, V. G., Appl. Phys. Lett 53, 2528 (1988).CrossRefGoogle Scholar
158Palmstrøm, C. J., Tabatabaie, N., and Allen, S. J., Appl. Phys. Lett 53, 2608 (1988).CrossRefGoogle Scholar
159Saitoh, S., Ishiwara, H., Asano, T., and Furukawa, S., Jpn. J. Appl. Phys. 20, 1649 (1981).CrossRefGoogle Scholar
160Tung, R. T., Gibson, J. M., Bean, J. C., Poate, J. M., and Jacobson, D. C., Appl. Phys. Lett 40, 684 (1982).CrossRefGoogle Scholar
161Kao, Y. C., Tejwami, M., Xie, Y. H., Lin, T. L., and Wang, K. L., J.Vac. Sci. Technol B3, 596 (1985).CrossRefGoogle Scholar
162Bean, J. C. and Poate, J. M., Appl. Phys. Lett 37, 634 (1980).CrossRefGoogle Scholar
163Tung, R. T., Gibson, J.M., and Poate, J.M., Apl. Phys. Lett 42, 429 (1983).CrossRefGoogle Scholar
164Tung, R. T.Gibson, J.M., and Poate, J.M., Appl. Phys. Let 42, 888 (1983).CrossRefGoogle Scholar
165White, A. E.Short, K.T., Dynes, R.C., Garno, J.P., and Gibson, J.M., Appl. Phys. Lett 50, 95 (1987).CrossRefGoogle Scholar
166Barbour, J.C., Picraux, S.T., and Doyle, B.L., Mater. Res. Soc. Symp. Proc 102, 371 (1988).CrossRefGoogle Scholar
167Yalisove, S.M., Tung, R.T., and Batstone, J.L., Mater. Res. Soc. Symp. Proc 116, 439 (1988).CrossRefGoogle Scholar
168Gibson, J. M., Batstone, J. L., Tung, R.T., and Unterwald, F. C., Phys. Rev. Lett 60, 1158 (1988).CrossRefGoogle Scholar
169Gibson, J.M., Batstone, J.L., and Tung, R.T., Appl. Phys. Lett 51, 45 (1987).CrossRefGoogle Scholar
170Phillips, J. M., Batstone, J. L., Hensel, J. C., Cerullo, M., and Unterwald, F. C., J. Mater. Res. 4 (1), 144 (1989).CrossRefGoogle Scholar
171Tung, R.T. and Batstone, J.L., Appl. Phys. Lett. 52, 648 (1988).CrossRefGoogle Scholar
172Hellman, F. and Tung, R.T., Phys. Rev. B37, 10,786 (1988).Google Scholar
173Tung, R.T. and Gibson, J. M.,Mater. Res. Soc. Symp. Proc. 67, 211 (1986) and references therein.CrossRefGoogle Scholar
174Flor, Th., Schulz, M., and Tung, R.T., Appl. Phys. Lett. 51, 1343 1987).CrossRefGoogle Scholar
175Fujitani, H. and Asano, S., J. Phys. Soc. Jpn. 57, 2253 (1988).CrossRefGoogle Scholar
176Das, G.P., Blochl, P., Christensen, N.E., and Anderson, O.K., Metallization and Metal-Semiconductor Interfaces, edited by Batra, I. P. (Plenum Press, New York, 1988).Google Scholar
177Stiles, M.D. and Hamann, D.R., Phys. Rev. B40, 1349 (1989).CrossRefGoogle Scholar
178Hensel, J. C., Mater. Res. Soc. Symp. Proc. 54, 499 (1986) and references therein.CrossRefGoogle Scholar
179White, A.E. and Short, K.T., Science 241, 930 (1988).CrossRefGoogle Scholar
180Henz, J., Ospelt, M., and von Kanel, H, Proc. of the NATO Advanced Study Institute, Heterostructures on Si: One Step Further with Silicon (Kluwer, Dordrecht, The Netherlands, 1989), p. 215.CrossRefGoogle Scholar
181Tung, R.T. and Batstone, J. L., Appl. Phys. Lett. 52, 1611 (1988).CrossRefGoogle Scholar
182Rosenscher, E., Delage, S., Campidelli, Y., and Arnaud, F.D'Avitaya, Electron. Lett. 20, 762 (1984).CrossRefGoogle Scholar
183Hensel, J. C., Levi, A. J. F., Tung, R.T., and Gibson, J. M., Appl. Phys. Lett. 47, 151 (1985).CrossRefGoogle Scholar
184Rosenscher, E., Delage, S., D'Avitaya, F. Arnaud, D'Anter-roches, C., Belhaddad, K., and Pfister, J., Physica 134B, 106 (1985).Google Scholar
185Tung, R.T., Levi, A. J. F., and Gibson, J. M., Appl. Phys. Lett. 48, 635 (1986).CrossRefGoogle Scholar
186Levi, A.J.F., Tung, R.T., Batstone, J.L., and Anzlowar, M., Mater. Res. Soc. Symp. Proc. 102, 361 (1988).CrossRefGoogle Scholar
187Mattheiss, L.F. and Hamann, D.R., Phys. Rev. B37, 10, 623 (1988).Google Scholar
188Yalisove, S. M., Tung, R.T., and Loretto, D., Extended Abstracts of the Symposium on Selected Topics in Electronic Materials, Fall 1988 Materials Research Society Meeting.Google Scholar
189Jalochowski, M. and Bauer, E., Phys. Rev. B37, 8622 (1988); B38, 527 (1988).CrossRefGoogle Scholar
190Spicer, W. E. and Cao, R., Phys. Rev. Lett. 62, 605 (1989); K. Stiles and A. Kahn, Phys. Rev. Lett. 62, 606 (1989).CrossRefGoogle Scholar
191Durbin, S. M., Cunningham, J. E., and Flynn, C. P., J. Phys. F 12, L75 (1982).CrossRefGoogle Scholar
192Kwo, J., in Thin Film Growth Techniques for Low-Dimensional Structures, edited by Farrow, R. F. C., Parkin, S. S. P., Dobson, P. J., Neave, J. H., and Arrott, A. S. (Plenum, New York, 1987).Google Scholar
193Miller, T., Mueller, M., and Chiang, T-C., Phys. Rev. (in press); see also T. Miller, A. Samsovas, G. E. Franklin, and T-C. Chiang, Phys. Rev. Lett. 61, 1404 (1988).CrossRefGoogle Scholar
194Erwin, R.W., Rhyne, J. J., Salamon, M. B., Borchers, J., Sinha, S., Pu, R., Cunningham, J. E., and Flynn, C. P., Phys. Rev. B35, 6808 (1987).CrossRefGoogle Scholar
195Cunningham, J. E. and Flynn, C. P., J. Phys. F15, 6221 (1985).Google Scholar
196Kueny, A., Kahn, M. R., Schuller, I. K., and Grimsditch, M., Phys. Rev. B29, 2879 (1986).Google Scholar
197 For an overview, see Beasley, M. R., in Percolation Localization in Superconductivity, edited by Goldman, A. M. and Wolf, S. A., NATO ASI Series (Plenum, New York, 1984), Vol. B109.Google Scholar
198 See, e.g., Proc. of the 1st Int. Symp. on Silicon Molecular Beam Epitaxy, edited by Bean, J. C. (Electrochemical Society, Pennington, NJ, 1985); Proc. of the 2nd Int. Symp. on Silicon Molecular Beam Epitaxy, edited by J. C. Bean and L. J. Schowalter (Electrochemical Society, Pennington, NJ, 1988); P.M. Mankiewich, M.J. Craighead, T. R. Harrison, and A. G. Dagem, Appl. Phys. Lett. 44, 468 (1984).Google Scholar
199Phillips, J. M., Mater. Res. Soc. Symp. Proc. 71, 97 (1986).CrossRefGoogle Scholar
200Farrow, R. F. C., Sinharoy, S., Hoffman, R. A., Reiger, J. H., Takei, W. J., Greggi, J. C., Wood, S., and Temofonte, T.A., Mater. Res. Soc. Symp. Proc. 37, 181 (1988).Google Scholar
201Nishibayashi, Y., Imura, T., Osaka, Y., and Fukumoto, H., Mater. Res. Soc. Symp. Proc. 116, 363 (1988).CrossRefGoogle Scholar
202Ishida, M., Katakabe, I., Ohtake, N., and Nakamura, T., Mater. Res. Soc. Symp. Proc. 116, 375 (1988).CrossRefGoogle Scholar
203Kado, Y. and Arita, Y., J. Appl. Phys. 61, 2398 (1987).CrossRefGoogle Scholar
204Egami, K., Mikami, M., and Tsuya, H., Appl. Phys. Lett. 43, 757 (1983).CrossRefGoogle Scholar
205Schowalter, L., Fathauer, R.W., Groehner, R. P., Turner, L.G., DeBlois, R.W., Hashimoto, S., Peng, J-L., Gibson, W. M., and Krusius, J.P., J. Appl. Phys. 58, 302 (1985).CrossRefGoogle Scholar
206Smith, T.P., III, Phillips, J.M., Augustyniak, W. M., and Stiles, P. J., Appl. Phys. Lett. 45, 907 (1984).CrossRefGoogle Scholar
207Smith, T. P., III, Phillips, J. M., People, R., Augustyniak, W. M., and Wecht, K.W., Appl. Phys. Lett. 46, 947 (1985).Google Scholar
208Phillips, J.M., Hecker, N.E., and Cerullo, M. (unpublished research).Google Scholar
209Ishiwara, H. and Asano, T., Mater. Res. Soc. Symp. Proc. 53, 129 (1985); H. Ishiwara (private communication).CrossRefGoogle Scholar
210Pfeiffer, L., Phillips, J. M., Smith, T. P., III, Augustyniak, W. M., and West, K.W., Appl. Phys. Lett. 46, 947 (1985).CrossRefGoogle Scholar
211Phillips, J. M., Manger, M. L., Pfeiffer, L., Joy, D. C., Smith, T. P., III, Augustyniak, W.M., and West, K.W., Mater. Res. Soc. Symp. Proc. 53, 155 (1986).CrossRefGoogle Scholar
212Batstone, J.L., Phillips, J.M., and Hunke, E.C., Phys. Rev. Lett. 60, 1394 (1988).CrossRefGoogle Scholar
213Asano, T., Ishiwara, H., and Furukawa, S., Mater. Res. Soc. Symp. Proc. 91, 337 (1987).CrossRefGoogle Scholar
214Onoda, H., Sasake, M., Katoh, T., and Hirashita, N., Mater. Res. Soc. Symp. Proc. 91, 349 (1987).CrossRefGoogle Scholar
215Fathauer, R.W., Lewis, N., Hall, E. L., and Schowalter, L. J., J. Appl. Phys. 60, 3886 (1986).CrossRefGoogle Scholar
216Asano, T., Ishiwara, H., Orihara, K., and Furukawa, S., Jpn. J. Appl. Phys. 22, L118 (1983).CrossRefGoogle Scholar
217Asano, T., Kuriyama, Y., and Ishiwara, H., Electron. Lett. 21, 386 (1985).CrossRefGoogle Scholar
218Asano, T. and Ishiwara, H., Jpn. J. Appl. Phys. 21, L630 (1983).CrossRefGoogle Scholar
219Ishiwara, H. and Asano, T., Jpn. J. Appl. Phys. 22, Supplement 22–1, 201 (1983).CrossRefGoogle Scholar
220Asano, T., Ishiwara, H., Lee, H. C., Tsutsui, K., and Furukawa, S., Jpn. J. Appl. Phys. 25, L139 (1986).CrossRefGoogle Scholar
221Hashimoto, S., Schowalter, L. J., Smith, G. A., Lee, E. Y., Gibson, W. M., and Claxton, P. A., Mater. Res. Soc. Symp. Proc. 116, 257 (1988).CrossRefGoogle Scholar
222Lee, H. C., Asano, T., Ishiwara, H., and Furukawa, S., Jpn. J. Appl. Phys. 27, 1616 (1988).CrossRefGoogle Scholar
223Asano, T., Ishiwara, H., and Furukawa, S., Mater. Res. Soc. Symp. Proc. 145 (in press).Google Scholar
224Zogg, H., Vogt, W., and Melchior, H., Mater. Res. Soc. Symp. Proc. 71, 87 (1986).CrossRefGoogle Scholar
225Blunier, S., Zogg, H., and Wiebel, H., Appl. Phys. Lett. 53, 1512 (1988).CrossRefGoogle Scholar
226Maissen, C., Masek, J., Zogg, H., and Blunier, H., Appl. Phys. Lett. 53, 1608 (1988).CrossRefGoogle Scholar
227Fontaine, C., Berrabah, M., Nejjar, J., and Munoz-Yague, A., J. Cryst. Growth 81, 547 (1987) and references therein.CrossRefGoogle Scholar
228Tu, C.W., Forrest, S. R., and Johnston, W. D., Appl. Phys. Lett. 42, 569 (1983).CrossRefGoogle Scholar
229Kim, K. H., Ishiwara, H., Asano, T., and Furukawa, S., Jpn. J. Appl. Phys. 27, L2180 (1988).CrossRefGoogle Scholar
230Rieger, D., Himpsel, F. J., Karlsson, U. O., McFeely, F. R., Morar, J. F., and Yarnoff, J. A., Phys. Rev. B34, 7295 (1986).CrossRefGoogle Scholar
231Phillips, J. M. and Augustyniak, W. M., Appl. Phys. Lett. 48, 463 (1986).CrossRefGoogle Scholar
232Fathauer, R.W., Hunt, B. D., Schowalter, L. J., Okamoto, M., and Hashimoto, S., Appl. Phys. Lett. 49, 64 (1987).CrossRefGoogle Scholar
233Yang, M-H. and Flynn, C. P., Phys. Rev. Lett. 62, 2476 (1989).CrossRefGoogle Scholar
234 See, e.g., Stein, B. J. and Meyer, H. J., J. Cryst. Growth 49, 696 (1980); R. B. Bjorklund and K. G. Spears, J. Chem. Phys. 66, 3448 and 3437 (1977); W. Laaser, H. Dabringhaus, and H. J. Meyer, J. Cryst. Growth 62, 248 (1983).CrossRefGoogle Scholar
235Hove, J.E., Phys. Rev. 99, 430 (1955).CrossRefGoogle Scholar
236 See, e.g., DOE Panel Report on Clusters and Cluster-Assembled Materials, J. Mater. Res. 4 (3), 704 (1989).CrossRefGoogle Scholar
237Petroff, P. M., Gossard, A. C., and Wiegmann, W., Appl. Phys. Lett. 45, 620 (1984).CrossRefGoogle Scholar
238Gaines, J. M., Petroff, P. M., Kroemer, H., Simes, R. J., Geels, R. S., and English, J. H., J. Vac. Sci. Technol. B6, 1378 (1988).CrossRefGoogle Scholar
239Petroff, P. M., Gaines, J. M., Tsuchiya, M., Simes, R., Coldren, L., Kroemer, H., English, J., and Gossard, A. C., J. Cryst. Growth 95, 260 (1989).CrossRefGoogle Scholar
240Horikoshi, , Kawashima, M., and Yamaguchi, H., Jpn. J. Appl. Phys. 27, 169 (1988).CrossRefGoogle Scholar
241Petroff, P. M., J. Vac. Sci. Technol. 14, 1973 (1977).CrossRefGoogle Scholar
242Tsuchiya, M., Petroff, P. M., and Coldren, L. A., Appl. Phys. Lett. 54, 1690 (1989).CrossRefGoogle Scholar
243Tsuchiya, M., Gaines, J. M., Yan, R. H., Simes, R. J., Holtz, P. O., Coldren, L. A., and Petroff, P. M., Phys. Rev. Lett. 6, 466 (1989).CrossRefGoogle Scholar
244Petroff, P. M. (preprint).Google Scholar
245Fukui, T. and Ando, S., Electron. Lett. 25, 410 (1989).CrossRefGoogle Scholar
246Kapon, E., Hwang, D. M., and Bhat, R., Phys. Rev. Lett. 63, 430 (1989); E. Kapon, S. Simhony, D. M. Hwang, K. Kash, R. Bhat, and E. Colas, Proc. Conf. on Quantum Electronics and Laser Science, April 24–28, Baltimore, MD (1989), paper PD 15–1.CrossRefGoogle Scholar
247Shichijo, H., Matyi, R. J., and Taddiken, A. H., IEEE Electron Dev. Lett. 9, 444 (1988).CrossRefGoogle Scholar
248Choi, H. K., Mattia, J. P., Turner, G.W., and Tsaur, B.Y., IEEE Electron Dev. Lett. 9, 512 (1988); G.W. Turner, H. K. Choi, J. P. Mattia, C. L. Chen, S. J. Eglash, and B.Y. Tsaur, Mater. Res. Soc. Symp. Proc. 116, 179 (1988).CrossRefGoogle Scholar
249Matyi, R. J., Shichijo, H., Kim, T. S., and Tsai, H. L., Mater. Res. Soc. Symp. Proc. 116, 105 (1988).CrossRefGoogle Scholar
250Feldman, L. C. and Mayer, J. W., Fundamentals of Surface and Thin Film Analysis (North Holland, Amsterdam, 1986).Google Scholar
251Chu, W. K., Mayer, J. W., and Nicolet, M. A., Backscattering Spectrometry (Academic Press, New York, 1978).Google Scholar
252Chang, C. C., in Characterization of Solid Surfaces, edited by Kane, P. F. and Larrabee, G.R. (Plenum Press, New York, 1974), Chap. 20.Google Scholar
253Methods of Surface Analysis, edited by Czanderna, A.W. (Elsevier, Amsterdam, 1975).Google Scholar
254Ertl, G. and Kuppers, J., Low Energy Electrons and Surface Chemistry (Verlag Chemie International, Weinheim, 1985).Google Scholar
255Ghosh, P. K., Introduction to Photoelectron Spectroscopy (Wiley-Interscience Publishers, New York, 1983).Google Scholar
256Handbook of X-Ray and Ultraviolet Photoelectron Spectroscopy, edited by Briggs, D. (Heydon and Son, London, 1978).Google Scholar
257Briggs, D. and Seah, M. P., Practical Surface Analysis by Auger and X-Ray Photoelectron Spectroscopy (John Wiley and Sons, New York, 1983).Google Scholar
258Photoemission in Solids I and II, Topics in Appl. Phys., edited by Cardona, M. and Ley, L. (Springer-Verlag, New York, 1978 and 1979), Vols. 26 and 27.CrossRefGoogle Scholar
259Carlson, T. A., Photoelectron and Auger Spectroscopy (Plenum Press, New York, 1975).CrossRefGoogle Scholar
260Marcus, R. B. and Sheng, T. T., Transmission Electron Microscopy of Silicon VLSI Circuits and Structures (Wiley-Interscience Publishers, New York, 1983).Google Scholar
261Murr, L. E., Electron and Ion Microscopy and Microanalysis (Marcel Dekker, New York, 1982).Google Scholar
262Somorjai, G. A., Chemistry in Two Dimensions: Surfaces (Cornell University Press, Ithaca, NY, 1981).Google Scholar
263Williams, D. B., Practical Electron Microscopy in Materials Science (Verlag Chemie International, Weinheim, 1984).Google Scholar
264Electron Spectroscopy: Theory, Techniques and Applications, edited by Brundle, C.R. and Baker, A.D. (Academic Press, New York, 1981).Google Scholar
265Carlson, T. A., Photoelectron and Auger Spectroscopy (Plenum Press, New York, 1975).CrossRefGoogle Scholar
266Werner, H. W., in Electron and Ion Spectroscopy of Solids, edited by Fiermans, L., Vennik, J., and Dekeyser, W. (Plenum Press, New York, 1978).Google Scholar
267Hurst, , Principles and Application of Resonance Ionization Spectroscopy (Taylor and Francis, London, 1988).Google Scholar
268Landolt, M. and Mauri, D., Phys. Rev. Lett. 49, 1783 (1982).CrossRefGoogle Scholar
269van Hove, M. A., Weinberg, W. H., and Chen, C-M., Low Energy Electron Diffraction (Springer, Berlin, 1986).CrossRefGoogle Scholar
270Bauer, E. and Telieps, W., Scanning Microscopy, Suppl. 1 (1987) 99 (Scanning Microscopy Intern. Chicago); in Surface and Interface Characterization by Electron and Optical Methods, edited by Howie, A. and Valdie, U. (Plenum Press, New York, 1988), p. 195.CrossRefGoogle Scholar
271Bennig, G., Rohrer, H., Gerber, C., and Weibel, E., Phys. Rev. Lett. 49, 57 (1982); P. K. Hansma and J. Tersoff, J. Appl. Phys. 61, Rl (1987).CrossRefGoogle Scholar
272Pellin, M. J., Young, C. E., Calaway, W. F., and Gruen, D. M., Nucl. Instrum. Methods B13, 653 (1986); F. Kimock, J. P. Baxter, D. L. Pappas, P. H. Kobring, and N. Winograd, Analytical Chemistry (1984).CrossRefGoogle Scholar
273Kessler, J., Polarized Electrons (Springer-Verlag, Berlin, 1976); J. Kirschner, Polarized Electrons at Surfaces (Springer-Verlag, Berlin, 1985).CrossRefGoogle Scholar
274Cowley, J. M., in Reflection High Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, edited by Larsen, P. K. and Dobson, P. J. (Plenum Press, New York, 1988), p. 261.CrossRefGoogle Scholar
275Yagi, K., Ogawa, S., and Tanishiro, Y., ibid., p. 285.Google Scholar
276Ichikawa, M. and Doi, T., ibid., p. 343.Google Scholar
277Fuoss, P. H., RenaudD.W. Kisker, G. D.W. Kisker, G., Tokuda, K. L., Brennan, S., and Kahn, J. L., Phys. Rev. Lett. 63, 2389 (1989).CrossRefGoogle Scholar
278Aspnes, D. E., Harbison, J. P., Studna, A. A., and Florez, L.T., Phys. Rev. Lett. 59, 1687 (1987); D.E. Aspnes, J.P. Harbison, A. A. Studna, and L.T. Florez, J. Vac. Sci. Technol. A6, 1327 (1987); D.E. Aspnes, R. Bhat, E. Codas, L.T. Florez, J.P. Harbison, M. K. Kelly, V. G. Keramidas, M. A. Koza, and A. A. Studna, SPIE Proc. 1037, 2 (1989).CrossRefGoogle Scholar
279Tsao, J.Y., Brennan, T. E., and Hammons, B. E., Appl. Phys. Lett. 53, 288 (1988); J.Y. Tsao, T. M. Brennan, and B. E. Hammons, J. Vac. Sci. Technol. (in press).CrossRefGoogle Scholar