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Etching of polycrystalline diamond films by electron beam assisted plasma

Published online by Cambridge University Press:  31 January 2011

Koji Kobashi
Affiliation:
Kobe Steel, Ltd., Electronics Research Laboratory, 5-5, Takatsuka-dai 1-chome, Nishi-ku, Kobe 651–22, Japan
Shigeaki Miyauchi
Affiliation:
Kobe Steel, Ltd., Electronics Research Laboratory, 5-5, Takatsuka-dai 1-chome, Nishi-ku, Kobe 651–22, Japan
Koichi Miyata
Affiliation:
Kobe Steel, Ltd., Electronics Research Laboratory, 5-5, Takatsuka-dai 1-chome, Nishi-ku, Kobe 651–22, Japan
Kozo Nishimura
Affiliation:
Kobe Steel, Ltd., Electronics Research Laboratory, 5-5, Takatsuka-dai 1-chome, Nishi-ku, Kobe 651–22, Japan
Jorge J. Rocca
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado 80523
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Abstract

Polycrystalline diamond films were processed in a direct current plasma produced by a self-focused electron beam using combinations of H2, O2, and He as the processing gas. The film surfaces were observed by scanning electron microscopy, and characterized by x-ray photoelectron spectroscopy. It was found that for the case in which O2 was included in the processing gas, a high density of etch pits appeared on (100) faces of diamond grains, and oxygen was either physisorbed or chemisorbed at the film surface. It was demonstrated that the etching apparatus used was capable of forming at least a 5-μm wide pattern of polycrystalline diamond film.

Type
Articles
Copyright
Copyright © Materials Research Society 1996

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References

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