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Effects of lanthanum nitrate buffer layer on the orientation and piezoelectric property of Pb(Zr,Ti)O3 thick film

Published online by Cambridge University Press:  01 December 2004

Jong-Jin Choi
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Gun-Tae Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Chee-Sung Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Jae-Wung Lee
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Hyoun-Ee Kim*
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
*
a) Address all correspondence to this author. e-mail: kimhe@snu.ac.kr
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Abstract

Highly oriented Pb(Zr,Ti)O3 (PZT) films were deposited on Pt/Ti/SiO2/Si substrates by the sol-gel method using lanthanum nitrate as a buffer layer. When the lanthanum nitrate buffer layer was heat treated at temperatures between 450 and 550 °C, the PZT layer coated onto this buffer layer showed a strong (100) preferred orientation. Regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature and heating rate, the film deposited on the buffer layer had this orientation. Thick films were also fabricated using the sol-gel multi-coating method, and the (100) texture was found to be maintained up to a thickness of 10 μm. The ferroelectric hysteresis and piezoelectric coefficient (d33) of highly oriented PZT thick films were characterized, and the (100) oriented PZT film showed higher piezoelectric property than the (111) oriented film.

Type
Articles
Copyright
Copyright © Materials Research Society 2004

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References

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