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Effects of interface bonding configuration on photoluminescence of ZnO quantum dots–SiOxNy nanocomposite films

Published online by Cambridge University Press:  31 January 2011

Yu-Yun Peng ,
Tsung-Eong Hsieh  and
Chia-Hung Hsu
Yu-Yun Peng
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, Republic of China
Tsung-Eong Hsieh*
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, Republic of China
Chia-Hung Hsu
Affiliation:
Research Division, National Synchrotron Radiation Research Center (NSRRC), Hsinchu, Taiwan 300, Republic of China
*
a)Address all correspondence to this author. e-mail: tehsieh@mail.nctu.edu.tw
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Abstract

Nanocomposite films containing ZnO quantum dots (QDs) and SiOxNy matrix were prepared by target-attached radio frequency sputtering. Photoluminescence (PL) dominated by violet and blue emissions was observed from all ZnO QD–SiOxNy nanocomposite films with dot diameters ranging from 2.77 to 6.65 nm. X-ray photoemission spectroscopy (XPS) revealed the formation of nitrogen-correlated bonding configurations in both the SiOxNy matrix and the dot/matrix interfaces. The nitrogen-correlated configuration at the interface produced a substantial polarization effect at dot surface. The suppression of green-yellow emission observed in photoluminescence spectra of all samples was ascribed to the hole-trapping process promoted by the enhancement of the surface polarization.

Keywords

NanostructureDielectricPhotoemission
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 4 , April 2008 , pp. 1155 - 1162
Copyright
Copyright © Materials Research Society 2008

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