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Effect of ordered structure and domain boundary on low-loss Ba[Mg1/3(Nbx/4Ta(4−x)/4)2/3]O3 microwave dielectric ceramics

Published online by Cambridge University Press:  03 March 2011

Chen-Fu Lin
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China
Horng-Hwa Lu
Affiliation:
Department of Mechanical Engineering, National Chin-Yi Institute of Technology, Taichung 411, Taiwan, Republic of China
Tien-I Chang
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China
Jow-Lay Huang*
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China
*
a) Address all correspondence to this author. e-mail: JLH888@mail.ncku.edu.tw
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Abstract

The microstructure of Ba[Mg1/3(NbxTa(4−x)/4)2/3]O3 ceramics (x = 1, 2, 3, and 4) was investigated. Ordered structure and domain boundary were observed by high-resolution transmission electron microscopy. The disordered structure of 0.41 nm lattice modulation and the 1:2 ordering structure of 0.71 nm lattice modulation in the [111] direction are both formed in Ba[Mg1/3(NbxTa(4−x)/4)2/3]O3 ceramics. Except for the incoherent interface between disordered and 1:2 ordering domain, the coherent interface between two 1:2 ordering domains can also be observed in the Ba[Mg1/3(NbxTa(4−x)/4)2/3]O3 ceramics. In the Ba[Mg1/3(Nb1/4Ta3/4)2/3]O3 ceramic, the formation of an extra ordering structure (lattice modulation of 1.24 nm in the [111] direction) on the antiphase domain boundary with proper Nb substitution contributes to lower dielectric loss due to the stabilization of the domain boundary.

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Articles
Copyright
Copyright © Materials Research Society 2006

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