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Dielectric ceramics in the BaO–Sm2O3–TiO2–Ta2O5 quaternary system

Published online by Cambridge University Press:  31 January 2011

X. M. Chen ,
Z. Y. Xu  and
J. Li
X. M. Chen
Affiliation:
Laboratory of Materials for Electronics and Communication, Department of Materials Science & Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
Z. Y. Xu
Affiliation:
Laboratory of Materials for Electronics and Communication, Department of Materials Science & Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
J. Li
Affiliation:
Laboratory of Materials for Electronics and Communication, Department of Materials Science & Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
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Extract

Dielectric ceramics in the BaO–Sm2O3–TiO2–Ta2O5 quaternary system were prepared and characterized for five typical compositions: BaSm5Ti7Ta3O30, Ba2Sm4Ti6Ta4O30, Ba3Sm3Ti5Ta5O30, Ba4Sm2Ti4Ta6O30, and Ba5SmTi3Ta7O30. The latter three compositions tended to form the tungsten–bronze phase, and the ceramics based on these compositions had a high dielectric constant (134–175) and a low dielectric loss (on the order of 10−3) but a larger temperature coefficient of the dielectric constant. Meanwhile, the former two compositions generally had a more complex phase constitution, containing the tungsten–bronze phase combined with some unknown phase, and a relatively small temperature coefficient of the dielectric constant in the temperature range of 20 to 85 °C could be achieved in these two compositions.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 1 , January 2000 , pp. 125 - 129
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1.Roberts, G.L., Cava, R.J., Peck, W.F., and Krajewski, J.J., J. Mater. Res. 12, 526 (1997).CrossRefGoogle Scholar
2.Ling, H.C., Yan, M.F., and Rhodes, W.W., J. Mater. Res. 5, 1752 (1990).CrossRefGoogle Scholar
3.Kolar, D., Gaberscek, S., Stadler, Z., and Suvorov, D., Ferroelectrics 27, 269 (1980).CrossRefGoogle Scholar
4.Laffez, P., Desgardin, G., and Raveau, B., J. Mater. Sci. 27, 5229 (1992).Google Scholar
5.Negas, T. and Davies, P.K., Materials and Processes for Wireless Communications, Ceramic Transactions, edited by Negas, T. and Ling, H. (American Ceramic Society, Westerville, OH, 1995), Vol. 53, p. 179.Google Scholar
6.Ohsato, H., Kato, H., Mizuta, M., Nishigaki, S., and Okuda, T., Jpn. J. Appl. Phys. 34, 5413 (1995).CrossRefGoogle Scholar
7.Wu, Y.J. and Chen, X.M., J. Eur. Ceram. Soc. 19, 1123 (1999).CrossRefGoogle Scholar
8.Kato, J., Kagata, H., and Nishimoto, K., Jpn. J. Appl. Phys. 30, 2343 (1991).CrossRefGoogle Scholar
9.Nakano, M., Suzuki, K., Miura, T., and Kobayashi, M., Jpn. J. Appl. Phys. 32, 4314 (1993).CrossRefGoogle Scholar
10.Chen, X.M. and Yang, J.S., J. Eur. Ceram. Soc. 19, 139 (1999).CrossRefGoogle Scholar
11.Chen, X.M., Yang, J.S., and Wang, J., in Dielectric Ceramic Materials, Ceramic Transactions Vol. 100, edited by Nair, K.M. and Bhalla, A.S. (American Ceramic Society, Westerville, OH, 1999) p. 71–76.Google Scholar
12.Ikeda, T., Haraguchi, T., Onodera, Y., and Saito, T., Jpn. J. Appl. Phys. 10, 987 (1971).CrossRefGoogle Scholar
13.Stephenson, N.C., Acta Crystallogr. 18, 496 (1965).CrossRefGoogle Scholar
14. JCPDS Card, No. 39-1445.Google Scholar
15. JCPDS Card, No. 39-0255.Google Scholar
16. JCPDS Card, No. 39-1331.Google Scholar