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Crystallization kinetics of amorphous Ga–Sb–Te films: Part II. Isothermal studies by a time-resolved optical transmission method

Published online by Cambridge University Press:  01 October 2004

Chain-Ming Lee
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China
Yeong-Iuan Lin
Department of Chemical Engineering, National United University, Miaoli 36000, Taiwan, Republic of China
Tsung-Shune Chin
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China; and Department of Chemical Engineering, National United University, Miaoli 36000, Taiwan, Republic of China
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Isothermal crystallization kinetics of amorphous Ga–Sb–Te films was studied by means of a time-resolved optical transmission method. Thin films with compositions along the pseudo-binary tie-lines Sb7Te3–GaSb and Sb2Te3–GaSb in the ternary phase diagram were prepared by the co-sputtering method. Crystallization of GaSbTe films reveals a two-stage process: an initial surface nucleation and coarsening (Stage 1) followed by the one-dimensional grain growth (Stage 2). The kinetic exponent (n) value in Stage 1 shows strong dependence on film compositions, while that of Stage 2 is less dependent. The activation energy in Stage 1 increases with increasing GaSb content and reaches the maximum values at compositions close to GaSb, but a decreasing trend was observed in Stage 2. Kinetics parameters between isothermal crystallization of thin films and non-isothermal crystallization of powder samples analyzed by differential scanning colorimetry [J. Mater. Res. 19, 2929 (2004)] are compared. The kinetic parameters in Stage 1 show much correspondence with those of non-isothermal cases in comparable kinetic exponents but with lower activation energies. The discrepancies between nonisothermal and isothermal kinetics are attributed to the sample morphology and the constraint effects.

Copyright © Materials Research Society 2004

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