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Crystallization kinetics of amorphous Ga–Sb–Te chalcogenide films: Part I. Nonisothermal studies by differential scanning calorimetry

Published online by Cambridge University Press:  01 October 2004

Chain-Ming Lee
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30043, Taiwan, Republic of China
Yeong-Iuan Lin
Department of Chemical Engineering, National United University, Miaoli, 36000, Taiwan, Republic of China
Tsung-Shune Chin
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30043, Taiwan, Republic of China; and Department of Chemical Engineering, National United University, Miaoli, 36000, Taiwan, Republic of China
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Nonisothermal crystallization kinetics of amorphous chalcogenide Ga–Sb–Te films with compositions along the pseudo-binary tie-lines connecting Sb7Te3−GaSb and Sb2Te3–GaSb of the ternary phase diagram were investigated by means of differential scanning calorimetry. Powder samples were prepared firstly by film deposition using a co-sputtering method; the films were then stripped from the substrate. The activation energy (Ea) and rate factor (Ko) were evaluated from the heating rate dependency of the crystallization temperature using the Kissinger method. The kinetic exponent (n) was deduced from the exothermic peak integrals using the Ozawa method. The crystallization temperature (Tx = 181 to 327 °C) and activation energy (Ea= 2.8 to 6.5 eV) increased monotonically with increasing GaSb content and reached a maximum value in compositions located at the vicinity of GaSb. The kinetic exponent is temperature dependent and shows higher values in the SbTe-rich compositions. Promising media compositions worthy of further studies were identified through the determined kinetics parameters.

Copyright © Materials Research Society 2004

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