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Crystallization kinetics of amorphous Ga–Sb–Te chalcogenide films: Part I. Nonisothermal studies by differential scanning calorimetry

Published online by Cambridge University Press:  01 October 2004

Chain-Ming Lee
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30043, Taiwan, Republic of China
Yeong-Iuan Lin
Affiliation:
Department of Chemical Engineering, National United University, Miaoli, 36000, Taiwan, Republic of China
Tsung-Shune Chin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30043, Taiwan, Republic of China; and Department of Chemical Engineering, National United University, Miaoli, 36000, Taiwan, Republic of China
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Abstract

Nonisothermal crystallization kinetics of amorphous chalcogenide Ga–Sb–Te films with compositions along the pseudo-binary tie-lines connecting Sb7Te3−GaSb and Sb2Te3–GaSb of the ternary phase diagram were investigated by means of differential scanning calorimetry. Powder samples were prepared firstly by film deposition using a co-sputtering method; the films were then stripped from the substrate. The activation energy (Ea) and rate factor (Ko) were evaluated from the heating rate dependency of the crystallization temperature using the Kissinger method. The kinetic exponent (n) was deduced from the exothermic peak integrals using the Ozawa method. The crystallization temperature (Tx = 181 to 327 °C) and activation energy (Ea= 2.8 to 6.5 eV) increased monotonically with increasing GaSb content and reached a maximum value in compositions located at the vicinity of GaSb. The kinetic exponent is temperature dependent and shows higher values in the SbTe-rich compositions. Promising media compositions worthy of further studies were identified through the determined kinetics parameters.

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Articles
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Yusu, K., Ashida, S., Nakamura, N., Oomachi, N., Morishita, N., Ogawa, A. and Ichihara, K.: Advanced phase change media for blue laser recording of 18 GB capacity for 0.65 numerical aperture and 30 GB capacity for 0.85 numerical aperture. Jpn. J. Appl. Phys. 42, 858 (2003).CrossRefGoogle Scholar
2Lee, C-M., Yen, W-S., Liu, R-H. and Chin, T-S.: Performance of Ge-Sb–Bi-Te-B recording media for phase-change optical disks. Jpn. J. Appl. Phys. 40, 5321 (2001).CrossRefGoogle Scholar
3Lee, C.M., Chin, T.S. and Huang, E.Y.: Optical properties and structure of tellurium-germanium-bismuth-antimony compounds with fast phase-change capability. J. Appl. Phys. 89, 3290 (2001).CrossRefGoogle Scholar
4Narahara, T., Kobayashi, S., Hattori, M., Shimpuku, Y., van den Enden, G.J., Kahlman, J.A.H.M., van Dijk, M. and van Woudenberg, R.: Optical disc system for digital video recording. Jpn. J. Appl. Phys. 39, 912 (2000).CrossRefGoogle Scholar
5Tieke, B., Dekker, M., Pfeffer, N., van Woudenberg, R., Zhou, G-F. and Ubbens, I.P.D.: High data-rate phase-change media for the digital video recording system. Jpn. J. Appl. Phys. 39, 762 (2000).CrossRefGoogle Scholar
6Lee, C-M. and Chin, T-S.: New optical media based on Ge4Sb1-x BixTe5, in Proc. 12th Int. Conf. Ternary and Multinary Compounds. Jpn. J. Appl. Phys. Suppl. 39–41, 513 (2000).CrossRefGoogle Scholar
7Lee, C-M., Chin, T-S., Huang, Y-Y., Tung, I-C., Jeng, T-R., Chiang, D-Y. and Huang, D-R.: Optical properties of Ge40Sb10Te50Bx (x = 0-2) Films. Jpn. J. Appl. Phys. 38, 6369 (1999).CrossRefGoogle Scholar
8Lee, C-M., Lin, Y-I. and Chin, T-S.: Crystallization kinetics of amorphous Ga-Sb-Te films: Part II. Isothermal studies by a time-resolved optical transmission method. J. Mater. Res. 19,2938 (2004).Google Scholar
9Avrami, M.: Kinetics of phase change. I, General theory. J. Chem. Phys. 7, 1103 (1939).CrossRefGoogle Scholar
10Avrami, M.: Kinetics of phase change. II, Transformation-time relations for random distribution of nuclei. J. Chem. Phys. 8, 212 (1940).CrossRefGoogle Scholar
11Avrami, M.: Kinetics of phase change. III, Granulation, phase change, and microstructure. J. Chem. Phys. 9, 177 (1941).CrossRefGoogle Scholar
12Johnson, W.A. and Mehl, R.F.: Reaction kinetics in processes of nucleation and growth. Trans. Am. Inst. Min. Metall. Pet. Eng. 135, 416 (1939).Google Scholar
13Kissinger, H.E.: Reaction kinetics in differential thermal analysis. Anal. Chem. 29, 1702 (1957).CrossRefGoogle Scholar
14Ozawa, T.: Kinetics of non-isothermal crystallization. Polym. 12, 150 (1971).CrossRefGoogle Scholar
15Li, Y., Ng, S.C., Ong, C.K., Hng, H.H. and Goh, T.T.: Glass forming ability of bulk glass forming alloys. Scripta Mater . 36, 783 (1997).CrossRefGoogle Scholar
16Christian, J.W.: The Theory of Transformations in Metals and Alloys, 2nd ed. (Pergamon, Oxford, U.K., 1975), p. 542.Google Scholar
17Ohshima, N.: Crystallization of germanium-antimony-tellurium amorphous thin film sandwiched between various dielectric protective films. J. Appl. Phys. 79, 8357 (1996).CrossRefGoogle Scholar
18Lee, C.M. and Chin, T.S. (unpublished).Google Scholar