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Characterization of Reduced-pressure Chemical Vapor Deposition Polycrystalline Silicon Germanium Deposited at Temperatures ≤550 °C

Published online by Cambridge University Press:  31 January 2011

Sherif Sedky ,
Ann Witvrouw ,
Matty Caymax ,
Annelies Saerens  and
Paul Van Houtte
Sherif Sedky
Affiliation:
Department of Engineering Physics, Faculty of Engineering, Cairo University, 1221 Giza, Egypt
Ann Witvrouw
Affiliation:
Interuniversity Microelectrics Center (IMEC), Kapeldreef 75, B3001 Leuven, Belgium
Matty Caymax
Affiliation:
Interuniversity Microelectrics Center (IMEC), Kapeldreef 75, B3001 Leuven, Belgium
Annelies Saerens
Affiliation:
Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Leuven, Belgium
Paul Van Houtte
Affiliation:
Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Leuven, Belgium
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Abstract

This paper investigates the possibility of reducing the deposition temperature of polycrystalline silicon germanium to a level compatible with complementary metal-oxide semiconductor (CMOS) post processing. To achieve this goal, the exact wafer temperature during deposition was experimentally determined and it was found to be 30 °C lower than the reactor setting temperature. The deposition temperature was reduced from 625 to 500 °C. The impact of varying the deposition pressure from 10 to 760 torr and the germanium content from 15% to 100% was investigated. X-ray diffraction spectroscopy and transmission electron microscopy showed that the SixGe1−x films deposited at an actual wafer temperature of 520 °C are polycrystalline for germanium contents as low as 15%. Also, it was shown that the deposition conditions can be adjusted to yield a low tensile stress at an actual wafer temperature of 520 °C, which is suitable for integrating surface micromachined micro-electromechanical systems on top of standard CMOS wafers with Al interconnects.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 7 , July 2002 , pp. 1580 - 1586
Copyright
Copyright © Materials Research Society 2002

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