Skip to main content Accessibility help
×
Home
Hostname: page-component-55597f9d44-jzjqj Total loading time: 0.273 Render date: 2022-08-17T17:08:21.332Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "useNewApi": true } hasContentIssue true

Change of growth orientation in Pt films epitaxially grown on MgO(001) substrates by sputtering

Published online by Cambridge University Press:  31 January 2011

Kun Ho Ahn
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790–784, Korea
Sunggi Baik
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790–784, Korea
Sang Sub Kim
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, Kwangju 500–757, Korea
Get access

Abstract

A drastic change of the growth orientation in epitaxial Pt films grown by sputtering on MgO(001) was observed. At higher substrate temperatures, practically pure (001) epitaxial Pt films grow. On the other hand, epitaxial (111) Pt films grow at lower substrate temperatures. Interestingly, the gradual transition from (111) to (001) orientation occurs at lower temperatures when applied at a lower deposition rate. The degree of supersaturation in growth conditions is proposed as a key driver of the orientation change. When homogeneous nucleation occurs under a higher supersaturation, a large number of nuclei grow at the flat (001) terraces possessing (111) tetrahedral orientation. Under a lower supersaturation, a small number of nuclei aligned in (001) orientation to each other form dominantly at surface defects, resulting in a (001) epitaxial film with no grains. Our results suggest that one can selectively prepare either (001) or (111) epitaxial Pt films by properly adjusting substrate temperature and/or deposition rate.

Type
Articles
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Lairson, B.M., Visokay, M.R., Sinclair, R., and Clemens, B.M., Appl. Phys. Lett. 62, 639 (1993).CrossRefGoogle Scholar
2.Tokura, H., Window, B., Neely, D., and Swain, M., Thin Solid Films 253, 344 (1994).CrossRefGoogle Scholar
3.Menendez, J.L., Caro, P., and Cebollada, A., J. Cryst. Growth 192, 164 (1998).CrossRefGoogle Scholar
4.Caro, P., Cebollada, A., Ravelosona, D., Tamayo, J., Garcia, R., and Briones, F., Acta Mater. 46, 2299 (1998).CrossRefGoogle Scholar
5.McIntyre, P.C., Maggiore, C.J., Nastasi, M., J. Appl. Phys. 77, 6201 (1995).CrossRefGoogle Scholar
6.McIntyre, P.C., Maggiore, C.J., Nastasi, M., Acta Mater. 45, 869 (1997).CrossRefGoogle Scholar
7.McIntyre, P.C., Maggiore, C.J., Nastasi, M., Acta Mater. 45, 879 (1997).CrossRefGoogle Scholar
8.Narayan, J., Tiwari, P., Jagannadham, K., and Holland, O.W., Appl. Phys. Lett. 64, 2093 (1994).CrossRefGoogle Scholar
9.Morcrette, M., Llorente, A.G., Seiler, W., Perriere, J., Laurent, A., and Barboux, P., J. Appl. Phys. 88, 5100 (2000).CrossRefGoogle Scholar
10.Thompson, N., Proc. Phys. Soc. 66, 481 (1953).CrossRefGoogle Scholar
11.Lewis, B. and Anderson, J.C., Nucleation and Growth of Thin Films (Academic Press, New York, 1978).Google Scholar
12.Hecq, M. and Hecq, A., J. Vac. Sci. Technol. 18, 219 (1981).CrossRefGoogle Scholar
13.Ohring, M., The Materials Science of Thin Films (Academic Press, New York, 1992).Google Scholar
14.Kim, S.S., Baik, S., Kim, H.W., and Kim, C.Y., Surf. Sci. 294, L935 (1993).CrossRefGoogle Scholar
15.Marechal, C., Lacaze, E., Laurent, A., Perriere, J., and Seiler, W., Physica C 294, 23 (1998).CrossRefGoogle Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Change of growth orientation in Pt films epitaxially grown on MgO(001) substrates by sputtering
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Change of growth orientation in Pt films epitaxially grown on MgO(001) substrates by sputtering
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Change of growth orientation in Pt films epitaxially grown on MgO(001) substrates by sputtering
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *