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3C–SiC/Si/3C–SiC epitaxial trilayer films deposited on Si(111) substrates by reactive magnetron sputtering

Published online by Cambridge University Press:  03 March 2011

Q. Wahab ,
L. Hultman ,
I.P. Ivanov ,
M. Willander  and
J-E. Sundgren
Q. Wahab
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
L. Hultman
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
I.P. Ivanov
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
M. Willander
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
J-E. Sundgren
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
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Abstract

A trilayer epitaxial structure of 3C-SiC/Si/3C-SiC was grown on Si(111) substrate by reactive magnetron sputtering. The layered structure consisted of a 300 nm thick Si layer sandwiched between two 250 nm thick 3C-SiC layers. Cross-sectional transmission electron microscopy (XTEM) showed that all layers were epitaxial to each other. The 3C-SiC layers contained stacking faults and double positioning domains with a high density in the second SiC layer. The Si layer showed the lowest density of planar faults, but developed growth facets. Observation was made of stacking faults propagating from 3C-SiC to Si layer as well as stacking faults originating at the termination of 3C-SiC double positioning boundaries into Si. The termination of Si stacking faults during growth of SiC is also reported.

Type
Rapid Communication
Information
Journal of Materials Research , Volume 10 , Issue 6 , June 1995 , pp. 1349 - 1351
Copyright
Copyright © Materials Research Society 1995

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References

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