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Study of porous silicon substrates for the monolithic integration of radiofrequency circuits

Published online by Cambridge University Press:  13 December 2013

Marie Capelle ,
Jérome Billoué ,
Patrick Poveda  and
Gael Gautier
Marie Capelle
Affiliation:
GREMAN, Université François Rabelais, 16 Rue Pierre et Marie Curie, 37071 Tours, France STMicroelectronics, 16 rue Pierre et Marie Curie, 37071 Tours, France
Jérome Billoué*
Affiliation:
GREMAN, Université François Rabelais, 16 Rue Pierre et Marie Curie, 37071 Tours, France
Patrick Poveda
Affiliation:
STMicroelectronics, 16 rue Pierre et Marie Curie, 37071 Tours, France
Gael Gautier
Affiliation:
GREMAN, Université François Rabelais, 16 Rue Pierre et Marie Curie, 37071 Tours, France
*
Corresponding author: J. Billoué Email: jerome.billoue@univ-tours.fr
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Abstract

The silicon/porous silicon (PS) hybrid substrate is an interesting candidate for the monolithic integration of radiofrequency (RF) circuits. Thus, passive components can be integrated on the insulating PS regions close to the active devices integrated on silicon. Regarding silicon, hybrid substrates allow the improvement of RF circuits performances. To demonstrate it, coplanar waveguides have been integrated on glass, silicon, and localized PS substrates. The characterization results show that the substrate losses are reduced with PS.

Keywords

Si-based devices and IC technologiesNew and emerging technologies and materials
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 6 , Issue 1: IJMWT Special Issue on the 2013 National Microwave Days in France , February 2014 , pp. 39 - 43
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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