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A SiGe-based fully-integrated 122-GHz FMCW radar sensor in an eWLB package

Published online by Cambridge University Press:  10 February 2017

Muhammad Furqan*
Affiliation:
Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria. Phone: +43 732 2468 6409
Faisal Ahmed
Affiliation:
Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria. Phone: +43 732 2468 6409
Reinhard Feger
Affiliation:
Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria. Phone: +43 732 2468 6409
Klaus Aufinger
Affiliation:
Infineon Technologies, Am Campeon, 85579 Neubiberg, Germany
Walter Hartner
Affiliation:
Infineon Technologies, Wernerwerk Str. 2, 93049 Regensburg, Germany
Andreas Stelzer
Affiliation:
Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria. Phone: +43 732 2468 6409
*
Corresponding author: M. Furqan Email: m.furqan@nthfs.jku.at

Abstract

High-performance SiGe HBTs and advancements in packaging processes have enabled system-in-package (SiP) designs for millimeter-wave applications. This paper presents a 122-GHz bistatic frequency modulated continuous wave (FMCW) radar SiP. The intended applications for the SiP are short-range distance and angular position measurements as well as communication links between cooperative radar stations. The chip is realized in a 130-nm SiGe BiCMOS technology and is based on a fully differential frequency-multiplier chain with in phase quadrature phase receiver and a binary phase shift keying modulator in the transmit chain. On-wafer measurement results show a maximum transmit output power of 2.7 dBm and a receiver gain of 11 dB. The chip consumes a DC power of 570 mW at a supply voltage of 3.3 V. The fabricated chip is integrated in an embedded wafer level ball grid array (eWLB) package. Transmit/receive rhombic antenna arrays with eight elements are designed in two eWLB packages with and without backside metal, with a measured peak gain of 11 dBi. The transceiver chip size is 1.8 mm × 2 mm, while the package size is 12 mm × 6 mm, respectively. FMCW measurements have been conducted with a sweep bandwidth of up to 17 GHz and a measured range resolution of 1.5 cm has been demonstrated. 2D positions of multiple targets have been computed using two coherently linked radar stations.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2017 

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References

REFERENCES

[1] Böck, J. et al. SiGe HBT and BiCMOS Process Integration Optimization within the DOTSEVEN Project, Bipolar/BiCMOS Circuits and Technol. Meeting (BCTM), Boston, 2015.CrossRefGoogle Scholar
[2] Schröter, M. et al. SiGE HBT technology: future trends and TCAD-based roadmap, in Proceedings of the IEEE, 2016 (in print).Google Scholar
[3] Feger, R.; Pfeffer, C.; Scheiblhofer, W.; Schmid, C.; Lang, M.; Stelzer, A.: A 77-GHz cooperative radar system based on multi-channel FMCW stations for local positioning applications. IEEE Trans. Microw. Theory Tech., 61 (1) (2013), 676684.CrossRefGoogle Scholar
[4] Nasr, I. et al. A highly integrated 60 GHz 6-channel transceiver with antenna in package for smart sensing and short-range communications. IEEE J. Solid-State Circuits, 51 (9) (2016), 20662076.CrossRefGoogle Scholar
[5] Grzyb, J.; Heinemann, B.; Pfeiffer, U.R.: A fully integrated 0.55 THz near-field sensor with a lateral resolution down to 8 µm in 0.13 µm SiGe BiCMOS, in IEEE ISSCC Digest of Technical Papers, San Francisco, 2016, 424426.CrossRefGoogle Scholar
[6] Sarhmah, N.; Vazquez, P.R.; Grzyb, J.; Foerster, W.; Heinemann, B.; Pfeiffer, U.R.: A wideband fully integrated SiGe chipset for high data rate communication at 240 GHz, in Proc. European Microwave Integrated Circuits Conf., London, UK, 2016, 181184.CrossRefGoogle Scholar
[7] Köhler, M.; Hasch, J.; Blöcher, H.L.; Schmidt, L.-P.: Feasibility of automotive radar at frequencies beyond 100 GHz. Int. J. Microw. Wireless Technol., 5 (1), 2013, 4954.CrossRefGoogle Scholar
[8] Wagner, T.; Feger, R.; Stelzer, A.: Modification of DBSCAN and application to range/Doppler/DoA measurements for pedestrian recognition with an automotive radar system, in Proc. IEEE Radar Conf., Paris, 2015, 269272.CrossRefGoogle Scholar
[9] Ng, H.J.; Wessel, J.; Genschow, D.; Wang, R.; Sun, Y.; Kissinger, D.: Miniaturized 122 GHz System-on-chip radar sensor with on-chip antennas utilizing a novel antenna design approach, in IEEE MTT-S Int. Microw. Symp. Digest, San Diego, CA, 2016, 14.CrossRefGoogle Scholar
[10] Zhang, Y.P.; Liu, D.: Antenna-on-chip and antenna-in-package solutions to highly integrated millimeter-wave devices for wireless communications. IEEE. Trans. Antennas Propag., 57 (10) (2009), 28302841.CrossRefGoogle Scholar
[11] Furqan, M.; Ahmed, F.; Feger, R.; Aufinger, K.; Stelzer, A.: A 122-GHz system-in-package radar sensor with BPSK modulator in a 130-nm SiGe BiCMOS technology, in Proc. European Microwave Conf., London, UK, 2016, 683686.CrossRefGoogle Scholar
[12] Hamidipour, A.; Feger, R.; Poltschak, S.; Stelzer, A.: A 160-GHz system in package for short-range mm-wave applications. Int. J. Microw. Wireless Technol., 6 (2014), 361369.CrossRefGoogle Scholar
[13] Fischer, A.; Tong, Z.; Hamidipour, A.; Maurer, L.; Stelzer, A.: 77-GHz multi-channel radar transceiver with antenna in package. IEEE. Trans. Antennas Propag., 62 (3) (2014), 13861394.CrossRefGoogle Scholar
[14] Cao, B.; Wang, H.; Huang, Y.; Wang, J.; Xu, H.: A novel antenna-in-package with LTCC technology for W-band application. IEEE Antennas Wireless Propag. Lett., 13 (2014), 357360.Google Scholar
[15] Göttel, B.; Beer, S.; Pauli, M.; Zwick, T.: Ultra wideband D-band antenna integrated in a LTCC based QFN package using a flip-chip interconnect, in Proc. European Microwave Conf., Nuremberg, Germany, 2013, 227230.Google Scholar
[16] Beer, S.; Gulan, H.; Rusch, C.; Zwick, T.: Integrated 122-GHz antenna on a flexible polyimide substrate with flip chip interconnect. IEEE Trans. Microw. Theory Tech., 59 (5) (2011), 12741283.Google Scholar
[17] Seler, E.; Wojnowski, M.; Sommer, G.; Weigel, R.: Comparative analysis of high-frequency transitions in embedded wafer level BGA (eWLB) and quad flat no leads packages, in IEEE Electronics Packaging Technology Conf. (EPTC), Singapore, 2012, 99102.CrossRefGoogle Scholar
[18] Hamidipour, A.; Fischer, A.; Maurer, L.; Hartner, W.; Stelzer, A.: Antennas in package with stacked metallization, in Proc. European Microwave Conf., Nuremberg, Germany, 2013, 5659.Google Scholar
[19] Sarkas, I.; Hasch, J.; Balteanu, A.; Voinigescu, S.: A fundamental frequency 120-GHz SiGe BiCMOS distance sensor with integarated antenna. IEEE Trans. Microw. Theory Tech., 60 (3) (2012), 795812.CrossRefGoogle Scholar
[20] Sun, Y. et al. A low-cost miniature 120 GHz SiP FMCW/CW radar sensor with software linearization, in IEEE ISSCC Digest of Technical Papers, 2013, 148149.Google Scholar
[21] Chakraborty, A.; Trotta, S.; Wuertele, J.; Weigel, R.: A D-band transceiver front-end for broadband applications in a 0.35 µm SiGe bipolar technology, in IEEE Radio Frequency Integrated Circuits Symp., 2014, 405408.CrossRefGoogle Scholar
[22] Jaeschke, T.; Bredendiek, C.; Küppers, S.; Pohl, N.: High-precision D-band FMCW-radar sensor based on a wideband SiGe-transceiver MMIC. IEEE Trans. Microw. Theory Tech., 62 (12) (2014), 35823597.CrossRefGoogle Scholar