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A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots

Published online by Cambridge University Press:  23 January 2013

Aritra Acharyya ,
Suranjana Banerjee  and
J. P. Banerjee
Aritra Acharyya*
Affiliation:
Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata 700009, India. Phone: +91 9432979721
Suranjana Banerjee
Affiliation:
Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata 700009, India. Phone: +91 9432979721 Academy of Technology, West Bengal University of Technology, Adisaptagram, Hooghly 712121, West Bengal, India
J. P. Banerjee
Affiliation:
Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata 700009, India. Phone: +91 9432979721 Academy of Technology, West Bengal University of Technology, Adisaptagram, Hooghly 712121, West Bengal, India
*
Corresponding author: A. Acharyya Email: ari_besu@yahoo.co.in
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Abstract

A large-signal model and a simulation technique based on non-sinusoidal voltage excitation are used to obtain the electric field snapshots from which the series resistance and related high-frequency properties of a 35 GHz Silicon Single-Drift Region (SDR) Impact Avalanche Transit Time (IMPATT) device have been estimated for different bias current densities. A novel method is proposed in this paper to determine the parasitic series resistance of a millimeter-wave IMPATT device from large-signal electric field snapshots at different phase angles of a full cycle of steady-state oscillation. The method is based on the depletion width modulation of the device under a large-signal condition. The series resistance of the device is also obtained from the large-signal admittance characteristics at threshold frequency. The values of series resistance of a 35 GHz SDR IMPATT diode obtained from the proposed method and the large-signal admittance method are compared with experimentally reported values. The results show that the proposed method provides better and closer agreement with the experimental value.

Keywords

Large-signal simulationSeries resistanceElectric field snapshotsDepletion width modulationMillimeter-wave IMPATTs
Type
Research Paper
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Special Issue 1: Special Issue on the German RoCC Project , February 2013 , pp. 91 - 100
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013

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References

REFERENCES

[1]Midford, T.A.; Bernick, R.L.: Millimeter wave CW IMPATT diodes and oscillators. IEEE Trans. Microw. Theory Tech, 27 (1979), 483–492.Google Scholar
[2]Chang, Y.; Hellum, J.M.; Paul, J.A.; Weller, K.P.: Millimeter-wave IMPATT sources for communication applications. IEEE MTT-S Int. Microwave Symp. Digest, 1977, 216–219.Google Scholar
[3]Gray, W.W.; Kikushima, L.; Morentc, N.P.; Wagner, R.J.: Applying IMPATT power sources to modern microwave systems. IEEE J. Solid-State Circuits, 4 (1969), 409–413.Google Scholar
[4]Ray, U.C.; Gupta, A.K.: Measurement of electrical series resistance of W-band Si IMPATT diode. in Second Asia Pacific Microwave Conf. Proc., China, 1988, 434–437.Google Scholar
[5]Misawa, T.: Multiple uniform layer approximation in analysis of negative resistance in p-n junction in breakdown. IEEE Trans. Electron Devices, 14 (1967), 795–808.Google Scholar
[6]Adlerstein, M.G.; Holway, L.H.; Chu, S.L.G.: Measurement of series resistance in IMPATT diodes. IEEE Trans. Electron Devices, 30 (1983), 179–182.Google Scholar
[7]Mitra, M.; Das, M.; Kar, S.; Roy, S.K.: A study of the electrical series resistance of Si IMPATT diodes. IEEE Trans. Electron Devices, 40 (1993), 1890–1893.Google Scholar
[8]Pal, T.K.: Series resistance of silicon millimeter wave (Ka-band) IMPATT diodes. Def. Sci. J., 59 (2009), 189–193.Google Scholar
[9]Acharyya, A.; Banerjee, S.; Banerjee, J.P.: Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device. J. Semicond., 34 (2013), 024001–12.Google Scholar
[10]Acharyya, A.; Banerjee, S.; Banerjee, J. P.: Large-signal simulation of 94 GHz pulsed DDR silicon IMPATTs including the temperature transient effect. Radioengineering, 21 (2012), 1218–1225.Google Scholar
[11]Acharyya, A.; Banerjee, S.; Banerjee, J.P.: Temperature transient effect on the large-signal properties and frequency chirping in pulsed silicon DDR IMPATTs at 94 GHz, in IEEE Conf. CODEC 2012, Kolkata, India, 2012, 1–3.Google Scholar
[12]Pal, T.K.; Banerjee, J.P.: Design, fabrication and RF characterization of Ka-band silicon IMPATT diode. Int. J. Eng. Sci. Technol., 2 (2010), 4775–4790.Google Scholar
[13]Grant, W.N.: Electron and hole ionization rates in epitaxial silicon. Solid State Electron, 16 (1973), 1189–1203.Google Scholar
[14]Canali, C.; Ottaviani, G.; Quaranta, A.A.: Drift velocity of electrons and holes and associated anisotropic effects in silicon. J. Phys. Chem. Solids, 32 (1971), 1707.Google Scholar
[15]Zeghbroeck, B.V.: Principles of Semiconductor Devices, Colorado Press, USA, 2011.Google Scholar
[16]Electronic Archive: New Semiconductor Materials, Characteristics and Properties: http://www.ioffe.ru/SVA/NSM/Semicond/Si/index.htmlGoogle Scholar
[17]Resistivity, conductivity and temperature coefficients for some common materials: http://www.engineeringtoolbox.com/resistivity-conductivity-d_418.htmlGoogle Scholar
[18]Kurokawa, K.: Some basic characteristics to broadband negative resistance oscillators. Bell. Syst. Tech. J., 48 (1969), 1937–1955.Google Scholar
[19]Sridharan, M.; Roy, S.K.: Computer studies on the widening of the avalanche zone and decrease on efficiency in silicon X-band sym. DDR. Electron Lett., 14 (1978), 635–637.Google Scholar
[20]Sridharan, M.; Roy, S.K.: Effect of mobile space charge on the small signal admittance of silicon DDR. Solid State Electron, 23 (1980), 1001–1003.Google Scholar