Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-07-05T15:57:34.322Z Has data issue: false hasContentIssue false

Novel DC-biasing circuits with arbitrary harmonics-control capability for compact high-efficiency power amplifiers

Published online by Cambridge University Press:  22 April 2019

Shinichi Tanaka*
Affiliation:
Graduate School of Science and Engineering, Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-ku, Tokyo 135-8548, Japan
Tomoya Oda
Affiliation:
Graduate School of Science and Engineering, Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-ku, Tokyo 135-8548, Japan
Kento Saiki
Affiliation:
Graduate School of Science and Engineering, Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-ku, Tokyo 135-8548, Japan
*
Author for correspondence: S. Tanaka, E-mail: s-tanaka@shibaura-it.ac.jp

Abstract

The next generation mobile communication systems impose challenging performance, size, and cost requirements on the power amplifiers (PAs). This paper presents novel DC-biasing circuits, which are compact and yet can control the harmonics almost arbitrarily. The proposed circuit consists of a composite right-/left-handed (CRLH) transmission line (TL) stub, of which the size and harmonics-control function can be tuned by modifying the dispersion diagram of the stub line. As a proof of concept, a compact 2-GHz 7-W GaN HEMT class-F PA using the versatile CRLH-TL stubs was fabricated, demonstrating 85.8% drain efficiency and 77.3% power-added efficiency.

Type
EuMW 2018
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2019 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Colantonio, P, Giannini, F, Giofre, R and Piazzon, L (2009) Theory and experimental results of a Class F AB-C Doherty power amplifier. IEEE Microwave Theory and Techniques 57, 19361947.Google Scholar
2.Mokhti, ZA, Tasker, PJ and Lees, J (2014) Using Waveform Engineering to Optimize Class-F Power Amplifier Performance in an Envelope Tracking Architecture. Rome: European Microwave Integrated Circuits Conference.Google Scholar
3.Tanaka, S, Koizumi, S and Saito, K (2016) Compact Harmonic Tuning Circuits for Class-F Amplifiers using Negative Order Resonance Modes of CRLH Stub Lines. London: European Microwave Conference.Google Scholar
4.Tanaka, S, Mukaida, K and Takata, K (2015) Compact stub resonators with enhanced Q-factor using negative order resonance modes of non-uniform CRLH transmission lines. IEICE Transactions on Electronics E98-C, 252259.Google Scholar
5.Caloz, C and Itoh, T (2006) Electromagnetic Metamaterials: Transmission Line Theory and Microwave Applications. John Wiley & Sons, Inc., Hoboken, New Jersey.Google Scholar
6.Chu, Q-X and Tian, X-K (2010) Design of UWB bandpass filter using stepped-impedance stub-loaded resonator, IEEE Microw. Wireless Components Letters 20, 501503.Google Scholar
7.Tanaka, S, Saito, K, Oka, T and Shibosawa, Y (2017) Applications of dispersion-engineered composite right-/left-handed transmission line stubs for microwave active circuits. IEICE Transactions on Electronics E100-C, 866874.Google Scholar
8.Enomoto, J, Ishikawa, R and Honjo, K (2017) Second harmonic treatment technique for bandwidth enhancement of GaN HEMT amplifier with harmonic reactive terminations. IEEE Transactions on Microwave Theory and Techniques 65, 49474952.Google Scholar
9.Yao, T, Ishikawa, R and Honjo, K (2013) Frequency Characteristic of Power Efficiency for 10 W/30W-Class 2 GHz Band GaN HEMT Amplifiers with Harmonic Reactive Terminations. Seoul: Asia-Pacific Microwave Conference.Google Scholar
10.Thian, M, Barakat, A and Fusco, V (2015) High-efficiency harmonic-peaking class-E power amplifiers with enhanced maximum operating frequency. IEEE Transactions on Microwave Theory and Techniques 63, 659671.Google Scholar
11.Wang, Y and Larsen, T (2015) Design of a High-Efficiency GaN HEMT RF Power Amplifier. Iasi: International Symposium on Signals, Circuits and Systems.Google Scholar
12.Chen, K and Peroulis, D (2013) A 3.1-GHz class-F power amplifier with 82% power-added-efficiency, IEEE Microw. Wireless Components Letters 23, 436438.Google Scholar
13.Watanabe, S, Takatsuka, S, Takagi, K, Kuroda, H and Oda, Y (1996) Effect of source harmonic tuning on linearity of power GaAs FET under class AB operation. IEICE Transactions on Electronics E79-C, 611616.Google Scholar