Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-07-06T22:12:20.316Z Has data issue: false hasContentIssue false

A multi-harmonic model taking into account coupling effects of long- and short-term memory in SSPAs

Published online by Cambridge University Press:  18 February 2013

Christophe Maziere*
Affiliation:
AMCAD Engineering, 1 Avenue d'Ester, 87069 Limoges, France
Emmanuel Gatard
Affiliation:
AMCAD Engineering, 1 Avenue d'Ester, 87069 Limoges, France
Cedric Enguehard
Affiliation:
AMCAD Engineering, 1 Avenue d'Ester, 87069 Limoges, France
Bjorn Gustavsen
Affiliation:
SINTEF Energy Research, N-7465 Trondheim, Norway
*
Corresponding author: C. Mazière Email: maziere@amcad-engineering.fr

Abstract

This paper presents a new macro modeling methodology for solid-state power amplifiers (SSPAs) and packaged transistors used in communication systems. The model topology is based on the principle of harmonic superposition recently introduced by Agilent Technologies' X-parametersTM combined with dynamic Volterra theory. The resulting multi-harmonic bilateral model takes into account the coupling effects of both short- and long-term memory in SSPAs. In this work, the behavioral model was developed from time-domain load pull and used to simulate the amplifier's response to a 16-QAM signal with specific regards to ACPR and IM3.

Type
Industrial and Engineering Paper
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Saleh, A.: Frequency-independent and frequency-dependent nonlinear models of TWT amplifiers. IEEE Trans. Commun., COM-29 (1981), 17151720.Google Scholar
[2]Abuelma'atti, M.: Frequency-dependent nonlinear quadrature model for TWT amplifiers. IEEE Trans. Commun., COM-29 (1984), 982986.Google Scholar
[3]Silva, C.P.; Aerosp. Corp., El Segundo, C.A.; Clark, C.J.; Moulthrop, A.A.; Muha, M.S.: Optimal-filter approach for non linear power amplifier modelling and equalization, in IEEE MTT-S Int. Microwave Symp. Dig, Boston, MA, June 2000, 437440.Google Scholar
[4]Silva, C.P.; Moulthrop, A.A.; Muha, M.S.: Introduction to polyspectral modeling and compensation techniques for wideband communications systems, in 58th ARFTG Conf. Dig., San Diego, CA, November 2001.Google Scholar
[5]Pedro, J.C.; Carvalho, N.B.; Lavrador, P.M.: Modeling nonlinear behavior of band-pass memoryless and dynamic systems, in IEEE MTT-S Int. Microwave Symp. Dig.-CDROM, Philadelphia, PA, June 2003.Google Scholar
[6]Ku, H.; Kenney, J.S.: Behavioral modeling of RF power amplifiers, in IEEE MTT-S Int. Microwave Symp. Dig.-CDROM, Philadelphia, PA, June 2003.Google Scholar
[7]Zhu, A.; Wren, M.; Brazil, T.J.: An efficient Volterra-based bahavioral model for wideband RF power amplifiers, in IEEE MTT-S Int. Microwave Symp. Dig.-CDROM, Philadelphia, PA, June 2003.Google Scholar
[8]Filicori, F.; Vannini, G.; Monaco, V.A.: A non linear integral model of electron devices for HB analysis. IEEE Trans. Microw. Theory Tech., MTT-40 (1992), 14561465.Google Scholar
[9]Mirri, D.; Filicori, F.; Iuculano, G.; Pasini, G.: A non-linear dynamic model for performance analysis of large-signal amplifier in communication systems, in IMTC/99 IEEE Instrumentation and Measurement Technology Conf. Dig, Venice, May 1999, 193197.Google Scholar
[10]Le Gallou, N.; Ngoya, E.; Buret, H.; Barataud, D.; Nebus, J.M.: An improved behavioral modeling technique for high power amplifiers with memory, in IEEE MTT-S International Microwave Symp. Dig., Phoenix, AZ, 2001, 983986.Google Scholar
[11]Verspecht, J.; Root, D.: Polyharmonic distortion modeling. IEEE Microwav. Mag., 7 (3) (2006), 4457.Google Scholar
[12]Horn, J.M.; Verspecht, J.; Gunyan, D.; Betts, L.; Root, D.E.; Eriksson, J.: X-parameter measurement and simulation of a GSM handset amplifier, in IEEE 3rd EUMIC Conf. EUMW, Amsterdam, 2008.Google Scholar
[13]Soury, A.; Ngoya, E.: Handling long-term memory effects in X-parameters model, in IEEE MTT-S Int. Microwave Symp. Dig.-CDROM, Montréal, Canada, June 2012.Google Scholar
[14]Demenitroux, W.; Maziere, C.; Gasseling, T.; Gustavsen, B.; Campovecchio, M.; Quere, R.: A new multi-harmonic and bilateral behavioral model taking into account short term memory effect, in Microwave Conf. EuMC, Paris, October 2010, 473476.Google Scholar
[15]Maziere, C.; Soury, A.; Ngoya, E.; Nebus, J.M.: A system level model of solid state amplifiers with memory based on a non linear feedback loop principle, in IEEE 8th European Conf. Wireless Technology – European Microwave Week 2005, Paris, October 2005.Google Scholar
[16]Bennadji, A.; Layec, A.; Soury, A.; Mallet, A.; Ngoya, E.; Quere, R.: Modeling of a communication chain with implementation of a Volterra power amplifier model for efficient system level simulation, in IEEE 8th European Conf. Wireless Technology – European Microwave Week 2005, Paris, October 2005.Google Scholar
[17]Bosch, W.; Gatti, G.: Measurement and modeling techniques for wideband communication components and systems. Int. J. RF Microw. Comput. Aided Eng. (USA), 13 (1) (1989), 531.Google Scholar
[18]Meghdadi, V.: Modeling of solid state power amplifier (SSPA) and validation by means of a system simulator. Ann. Telecommun. (France), 53 (1–2) (1998), 414.Google Scholar
[19]Draxler, P.; Langmore, I.; Hung, T.P.; Asbeck, P.M.: Time domain characterization of power amplifiers with memory effects, in IEEE MTT-S Int. Microwave Symp. Dig.-CDROM, Philadelphia, PA, June 2003.Google Scholar