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Mechanical nanogap switch for low-power on-board electronics

Published online by Cambridge University Press:  20 June 2014

Achref Yahiaoui ,
Emilien Lemoine ,
Arnaud Pothier  and
Pierre Blondy
Achref Yahiaoui*
Affiliation:
XLIM UMR 7252 – Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
Emilien Lemoine
Affiliation:
XLIM UMR 7252 – Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
Arnaud Pothier
Affiliation:
XLIM UMR 7252 – Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
Pierre Blondy
Affiliation:
XLIM UMR 7252 – Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
*
Corresponding author: A. Yahiaoui Email: achref.yahiaoui@etu.unilim.fr
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Abstract

This paper presents the design fabrication and measurement of a nanogap radio frequency microelectromechanical system (RF MEMS) metal-contact switch. The prosed device generates a relatively high contact force with a low actuation voltage using a dielectric layer between the actuation electrode and the moveable beam. The actuation voltage is decreased with good reliability of the device by scaling down the gap. Beam geometry optimization allowed reaching 126 micronewtons contact force with only 10 V bias voltage. The fabricated miniature switch (80 × 50 × 0.95 µm) has indeed a pull-down voltage of 6 V and a contact resistance <2 Ω with 10 V bias applied. By measuring the S-parameters, the up-state capacitance has been fitted to 22 fF. The remarkable figure-of-merit Ron × Cup = 44 fs reflects the good performance of the device. A cycling test showed the device operated for 90 min without any charging problem noted.

Keywords

RF-MEMSNanogapsOhmic switchesLow actuationMiniature
Type
Research Paper
Information
International Journal of Microwave and Wireless Technologies , Volume 7 , Issue 5 , October 2015 , pp. 515 - 520
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2014 

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