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Design methodology for a switching-mode RF CMOS power amplifier with an output transformer

Published online by Cambridge University Press:  24 September 2015

Changhyun Lee  and
Changkun Park
Changhyun Lee
Affiliation:
School of Electronic Engineering, College of Information Technology, Soongsil University, 369 Sangdo-Ro, Dongjak-Gu, Seoul, 06978, Republic of Korea. Phone: +82-2-828-7166
Changkun Park*
Affiliation:
School of Electronic Engineering, College of Information Technology, Soongsil University, 369 Sangdo-Ro, Dongjak-Gu, Seoul, 06978, Republic of Korea. Phone: +82-2-828-7166
*
Corresponding author: C. Park Email: pck77@ssu.ac.kr
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Abstract

In this study, we propose a design methodology for a switching-mode RF CMOS power amplifier with an output transformer. For a given supply voltage, output power, and target efficiency, the initial values of the transistor size, output inductance, and capacitance can be sequentially determined during the design of the power amplifier. The breakdown voltage of the power transistor is considered in the design methodology. To prove the feasibility of the proposed design methodology, we provide the design example of a 2.4-GHz switching-mode CMOS power amplifier with 180-nm RF CMOS technology. From the measured results, the feasibility of the proposed design methodology is proved.

Keywords

Switching modeAmplifierTransformerBreakdown voltageTransistor size
Type
Research Paper
Information
International Journal of Microwave and Wireless Technologies , Volume 8 , Issue 3: Journee Nationale des Micro-ondes (JNM) 2015 , May 2016 , pp. 471 - 477
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2015 

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