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Compact RF non-linear electro thermal model of SiGe HBT for the design of broadband ADC's

Published online by Cambridge University Press:  29 August 2012

Alaa Saleh*
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Abdel Kader El Rafei
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Mountakha Dieng
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Tibault Reveyrand
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Raphael Sommet
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Jean-Michel Nebus
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
Raymond Quere
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France
*
Corresponding author: Alaa Saleh Email: salehalaa83@gmail.com

Abstract

The design of high speed integrated circuits heavily relies on circuit simulation and requires compact transistor models. This paper presents a non-linear electro-thermal model of SiGe heterojunction-bipolar transistor (HBT). The non-linear model presented in this paper uses a hybrid π topology and it is extracted using IV and S-parameter measurements. The thermal sub-circuit is extracted using low-frequency S-parameter measurements. The model extraction procedure is described in detail. It is applied here to the modeling of npn SiGe HBTs. The proposed non-linear electro-thermal model is expected to be used for the design of high-speed electronic functions such as broadband analog digital converters in which both electrical and thermal aspects are engaged. The main focus and contribution of this paper stands in the fact that the proposed non-linear model covers wideband-frequency range (up to 65 GHz).

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

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References

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