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Performance study of a 248 GHz voltage controlled hetero-integrated source in InP-on-BiCMOS technology

Published online by Cambridge University Press:  13 November 2015

Maruf Hossain*
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany. Phone: +49 30 6392 2790
Ina Ostermay
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany. Phone: +49 30 6392 2790
Nils G. Weimann
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany. Phone: +49 30 6392 2790
Franz Josef Schmueckle
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany. Phone: +49 30 6392 2790
Johannes Borngraeber
Affiliation:
IHP – Leibniz-Institut für innovative Mikroelektronik GmbH, Frankfurt (Oder), Germany
Chafik Meliani
Affiliation:
IHP – Leibniz-Institut für innovative Mikroelektronik GmbH, Frankfurt (Oder), Germany
Marco Lisker
Affiliation:
IHP – Leibniz-Institut für innovative Mikroelektronik GmbH, Frankfurt (Oder), Germany
Bernd Tillack
Affiliation:
IHP – Leibniz-Institut für innovative Mikroelektronik GmbH, Frankfurt (Oder), Germany TUB, HFT4, Einsteinufer 25, 10587 Berlin, Germany
Olaf Krueger
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany. Phone: +49 30 6392 2790
Viktor Krozer
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany. Phone: +49 30 6392 2790 J. W. Goethe Universität Frankfurt/M, Frankfurt/M, Germany
Wolfgang Heinrich
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany. Phone: +49 30 6392 2790
*
Corresponding author: M. Hossain Email: maruf.hossain@fbh-berlin.de

Abstract

This paper presents the performance study of a 248 GHz voltage-controlled hetero-integrated signal source using indium phosphide (InP)-on-bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The source consists of a voltage controlled oscillator (VCO) in 0.25 µm BiCMOS technology and a frequency multiplier in 0.8 µm transferred-substrate InP-heterojunction bipolar transistor technology, which is integrated on top of the BiCMOS monolithic microwave integrated circuit in a wafer-level based benzocyclobutene bonding process. The vertical transitions from BiCMOS to InP in this process exhibit broadband properties with insertion losses below 0.5 dB up to 325 GHz. The VCO operates at 82.7 GHz with an output power of 6 dBm and the combined circuit delivers −9 dBm at 248 GHz with 1.22% tuning range. The phase noise of the combined circuit is −85 dBc/Hz at 1 MHz offset. The measured output return loss of the hetero-integrated source is >10 dB within a broad frequency range. This result shows the potential of the hetero integrated process for THz frequencies.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2015 

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References

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