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Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters

Published online by Cambridge University Press:  05 February 2015

Clément Potier*
Affiliation:
XLIM – UMR 7252, Université de Limoges/CNRS, 87060 Limoges Cedex, France. Phone: +33 160 403 024 III-V Lab, 91461 Marcoussis Cedex, France
Jean-Claude Jacquet
Affiliation:
III-V Lab, 91461 Marcoussis Cedex, France
Christian Dua
Affiliation:
III-V Lab, 91461 Marcoussis Cedex, France
Audrey Martin
Affiliation:
XLIM – UMR 7252, Université de Limoges/CNRS, 87060 Limoges Cedex, France. Phone: +33 160 403 024
Michel Campovecchio
Affiliation:
XLIM – UMR 7252, Université de Limoges/CNRS, 87060 Limoges Cedex, France. Phone: +33 160 403 024
Mourad Oualli
Affiliation:
III-V Lab, 91461 Marcoussis Cedex, France
Olivier Jardel
Affiliation:
III-V Lab, 91461 Marcoussis Cedex, France
Stéphane Piotrowicz
Affiliation:
III-V Lab, 91461 Marcoussis Cedex, France
Sylvain Laurent
Affiliation:
XLIM – UMR 7252, Université de Limoges/CNRS, 87060 Limoges Cedex, France. Phone: +33 160 403 024
Raphaël Aubry
Affiliation:
III-V Lab, 91461 Marcoussis Cedex, France
Olivier Patard
Affiliation:
III-V Lab, 91461 Marcoussis Cedex, France
Piero Gamarra
Affiliation:
III-V Lab, 91461 Marcoussis Cedex, France
Marie-Antoinette di Forte-Poisson
Affiliation:
III-V Lab, 91461 Marcoussis Cedex, France
Sylvain L. Delage
Affiliation:
III-V Lab, 91461 Marcoussis Cedex, France
Raymond Quéré
Affiliation:
XLIM – UMR 7252, Université de Limoges/CNRS, 87060 Limoges Cedex, France. Phone: +33 160 403 024
*
Corresponding author: C. Potier Email: clement.potier@xlim.fr

Abstract

This paper presents an original characterization method of trapping phenomena in gallium nitride high electron mobility transistors (GaN HEMTs). This method is based on the frequency dispersion of the output-admittance that is characterized by low-frequency S-parameter measurements. As microwave performances of GaN HEMTs are significantly affected by trapping effects, trap characterization is essential for this power technology. The proposed measurement setup and the trap characterization method allow us to determine the activation energy Ea and the capture cross-section σn of the identified traps. Three original characterizations are presented here to investigate the particular effects of bias, ageing, and light, respectively. These measurements are illustrated through different technologies such as AlGaN/GaN and InAlN/GaN HEMTs with non-intentionally doped or carbon doped GaN buffer layers. The extracted trap signatures are intended to provide an efficient feedback to the technology developments

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2015 

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References

REFERENCES

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