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A 60 GHz 14 dBm power amplifier with a transformer-based power combiner in 65 nm CMOS

Published online by Cambridge University Press:  08 April 2011

Dixian Zhao
Affiliation:
ESAT-MICAS, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B3001 Leuven, Belgium. Phone: + 32 16 321975
Ying He
Affiliation:
ESAT-MICAS, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B3001 Leuven, Belgium. Phone: + 32 16 321975
Lianming Li
Affiliation:
ESAT-MICAS, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B3001 Leuven, Belgium. Phone: + 32 16 321975
Dieter Joos
Affiliation:
ST-Ericsson, Excelsiorlaan 44-46, 1930, Zaventem, Belgium
Wim Philibert
Affiliation:
ST-Ericsson, Excelsiorlaan 44-46, 1930, Zaventem, Belgium
Patrick Reynaert*
Affiliation:
ESAT-MICAS, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B3001 Leuven, Belgium. Phone: + 32 16 321975
*
Corresponding author: P. Reynaert Email: Patrick.Reynaert@esat.kuleuven.be

Abstract

A 52–61 GHz power amplifier (PA) is implemented in 65 nm bulk complementary metal oxide semiconductor (CMOS) technology. The proposed PA employs a transformer-based power combiner to sum the output power from two unit PAs. Each unit PA uses transformer-coupled two-stage differential cascode topology. The differential cascode PA is able to increase the output power and ensure stability. The transformer-based passives enable a compact layout with the PA core area of only 0.3 mm2. The PA achieves a peak power gain of 10.2 dB with 3-dB bandwidth of 9 GHz. The measured saturated output power is 14.8 dBm with a peak power-added efficiency (PAE) of 7.2%. The reverse isolation is smaller than −33 dB from 25 to 65 GHz. The PA consumes a quiescent current of 143 mA from a 1.6 V supply.

Type
Research Article
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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