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A 10-W S-band class-B GaN amplifier with a dynamic gate bias circuit for linearity enhancement

Published online by Cambridge University Press:  29 November 2013

Pierre Medrel ,
Audrey Martin ,
Tibault Reveyrand ,
Guillaume Neveux ,
Denis Barataud ,
Philippe Bouysse ,
Jean-Michel Nébus ,
Luc Lapierre  and
Jean-François Villemazet
Pierre Medrel*
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33 0555 457 517
Audrey Martin
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33 0555 457 517
Tibault Reveyrand
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33 0555 457 517
Guillaume Neveux
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33 0555 457 517
Denis Barataud
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33 0555 457 517
Philippe Bouysse
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33 0555 457 517
Jean-Michel Nébus
Affiliation:
XLIM – CNRS 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33 0555 457 517
Luc Lapierre
Affiliation:
Centre National d'Etudes Spatiales (CNES), 31055 Toulouse, France
Jean-François Villemazet
Affiliation:
Thales Alenia Space (TAS), 31100 Toulouse, France
*
Corresponding author: P. Medrel Email: pierre.medrel@xlim.fr
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Abstract

In the present paper, we present a dynamic gate biasing technique applied to a 10 W, S-band GaN amplifier. The proposed methodology addresses class-B operation of power amplifiers that offers the potential for high efficiency but requires a careful attention to maintain good linearity performances at large output power back-off. This work proposes a solution to improve the linearity of class-B amplifiers driven by radio frequency-modulated signals having large peak to average power ratios. An important aspect of this work concerns the characterization of the dynamic behavior of GaN devices for gate bias trajectory optimization. For that purpose, the experimental study reported here is based on the use of a time-domain envelope setup. A specific gate bias circuit has been designed and connected to a 10 W – 2.5 GHz GaN amplifier demo board from CREE. Compared to conventional class-B operation with a fixed gate bias, a 10-dB improvement in terms of third-order intermodulation is reached. When applied to the amplification of 16-QAM signals the proposed technique demonstrates significant ACPR reduction of order of 6 dB along with error vector magnitude (EVM) improvements of five points over 8 dB output power back-off with a minor impact on power-added efficiency performances.

Keywords

Power amplifiers and linearizersMicrowave measurements
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 6 , Issue 1: IJMWT Special Issue on the 2013 National Microwave Days in France , February 2014 , pp. 3 - 11
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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References

[1]Moon, J.; Kim, J.; Kim, I.; Kim, J.; Kim, B.: A wideband envelope tracking doherty amplifier for WIMAX systems. IEEE Microw. Wirel. Compon. Lett., 18 (1) (2008), 49–51.CrossRefGoogle Scholar
[2]Kim, J.; Kim, D.; Cho, Y.; Kang, D.; Park, B.; Kim, B.: Envelope tracking power amplifier with dual-mode supply modulator for LTE applications, in 2012 IEEE MTT-S Int. Microwave Symp. Digest (MTT), June 2012, 1–3.Google Scholar
[3]Aitto-oja, T.: High efficiency envelope tracking supply voltage modulator for high power base station amplifier applications, in 2010 IEEE MTT-S Int. Microwave Symp. Digest (MTT), May 2010, 668–671.Google Scholar
[4]Hiura, S.; Sumi, H.; Takahashi, H.: High-efficiency 400 W power amplifier with dynamic drain voltage control for 6 MHz OFDM signal, in 2010 IEEE MTT-S Int. Microwave Symp. Digest (MTT), May 2010, 936–939.Google Scholar
[5]Draxler, P. et al. : High efficiency envelope tracking LDMOS power amplifier for W-CDMA, in IEEE MTT-S Int. Microwave Symp. Digest, June 2006, 1534–1537.Google Scholar
[6]Cidronali, A.; Giovannelli, N.; Vlasits, T.; Hernaman, R.; Manes, G.: A 240 W dual-band 870 and 2140 MHz envelope tracking GaN PA designed by a probability distribution conscious approach, in 2011 IEEE MTT-S Int. Microwave Symp. Digest (MTT), June 2011, 1–4.CrossRefGoogle Scholar
[7]Paidi, V.; Xie, S.; Coffie, R.; Mishra, U.; Long, S.; Rodwell, M.: Simulations of high linearity and high efficiency of class-B power amplifiers in GaN HEMT technology, in IEEELester Eastman Conf. High Performance Devices, Proc., August 2002, 101–107.Google Scholar
[8]Medrel, P.; Ramadan, A.; Nebus, J.-M.; Bouysse, P.; Lapierre, L.; Villemazet, J.-F.: High efficiency class-B GaN power amplifier with dynamic gate biasing for improved linearity. Electron. Lett., 48 (18) (2012), 1136–1137.CrossRefGoogle Scholar
[9]Jin, S. et al. : Enhanced linearity of CMOS power amplifier using adaptive common gate bias control, in Int. Microwave Symp., Seattle, June 2013.Google Scholar
[10]Conway, A.; Zhao, Y.; Asbeck, P.; Micovic, M.; Moon, J.: Dynamic gate bias technique for improved linearity of GaN HFET power amplifiers, in 2005 IEEE MTT-S Int. Microwave Symp. Digest, June 2005, 1–4.Google Scholar
[11]Ye, F.; Chiang, J.; Chen, C.; Sung, Y.: Dynamic bias circuits for efficiency improvement of RF power amplifier. Tamkang J. Sci. Eng., 7 (3) (2004), 183–188.Google Scholar
[12]Quere, R. et al. : Low frequency parasitic effects in rf transistors and their impact on power amplifier performances, in 2012 IEEE 13th Annual Wireless and Microwave Technology Conf. (WAMICON), April 2012, 1–5.Google Scholar
[13]http://www.cree.com/~/media/Files/Cree/RF/Data%20Sheets/CGH27015.pdf.Google Scholar
[14]Lecroy corp. Coherent interleaving sampling, patent: WO/2006/086257, August 2006.Google Scholar