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Investigation of ETCH Profiles in Etching of PZT and Pt Thin Films

Published online by Cambridge University Press:  10 February 2011

Chee Won Chung ,
Inyong Song  and
Jong Sig Lee
Chee Won Chung
Affiliation:
Electronic Materials Lab., Materials Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
Inyong Song
Affiliation:
Electronic Materials Lab., Materials Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
Jong Sig Lee
Affiliation:
Electronic Materials Lab., Materials Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
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Abstract

Reactive ion etching of PbZrxTi1−xO3 (PZT) and Pt thin films was studied by using chlorine and fluorine gas chemistry in an Inductively Coupled Plasma (ICP). PZT films were etched by varying the etching parameters including coil RF power, dc-bias voltage to substrate, and gas pressure. Etching characteristics of PZT films were investigated in terms of etch rate, etch selectivity, etch profile. Etch profile along with etch anisotropy was observed as a function of etching parameter by field emission scanning electron microscopy (FESEM). For the understanding of etching mechanism, X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma (ICP) analysis for the film composition were utilized. Platinum thin films have been etched by using Cl2/Ar in an ICP for the development offence-free etching. The redeposited materials formed on the pattern sidewall by using Cl2/Ar gas combination were analyzed by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). We found that the redeposited material was mainly PtCh compound. Based on this result, SiCl4/Cl2/Ar gas chemistry has been proposed as a new etching gas and demonstrated good etching profile of Pt films without unwanted redeposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 119
Copyright
Copyright © Materials Research Society 1998

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