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MBE Growth and Ultrahigh Temperature Processing of High-Quality AlN Films

Published online by Cambridge University Press:  15 March 2011

Z.Y. Fan ,
G. Rong ,
N. Newman ,
David J. Smith  and
D. Chandrasekhar
Z.Y. Fan
Affiliation:
Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, U.S.A.
G. Rong
Affiliation:
Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, U.S.A.
N. Newman
Affiliation:
Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, U.S.A.
David J. Smith
Affiliation:
Department of Physics and Astronomy and Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1504, U.S.A.
D. Chandrasekhar
Affiliation:
Department of Physics and Astronomy and Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1504, U.S.A.
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Abstract

Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150°C), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350°C) produces high-quality AlN thin-f ilms with narrow rocking curve widths (<2 arcmin) and low dislocation densities (<∼3×108cm−2). In contrast, the use of in-situ step anneals during synthesis did not achieve similar quality materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 587: Symposium O – Substrate Engineering - Paving the Way to Epitaxy , 1999 , O7.12
Copyright
Copyright © Materials Research Society 2000

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