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High-k ZrO2 Gate Dielectric on Strained-Si

Published online by Cambridge University Press:  01 February 2011

S. Bhattacharya ,
S. K. Samanta ,
S. Chatterjee ,
John McCarthy ,
B. M. Armstrong ,
H. S. Gamble ,
C. K. Maiti ,
T. Perova  and
A. Moore
S. Bhattacharya
Affiliation:
School of Electrical & Electronic Engineering, The Queen's University of Belfast, United Kingdom, E-mail: sekhar@qub.ac.uk Fax: 44 2890 667023
S. K. Samanta
Affiliation:
Department of Electronics & ECE, Indian Institute of Technology, Kharagpur 721302, India, E-mail: sekhar@qub.ac.uk Fax: 44 2890 667023
S. Chatterjee
Affiliation:
Department of Electronics & ECE, Indian Institute of Technology, Kharagpur 721302, India, E-mail: sekhar@qub.ac.uk Fax: 44 2890 667023
John McCarthy
Affiliation:
Department of Electrical & Electronic Engineering, Trinity College, University of Dublin, Ireland, E-mail: sekhar@qub.ac.uk Fax: 44 2890 667023
B. M. Armstrong
Affiliation:
School of Electrical & Electronic Engineering, The Queen's University of Belfast, United Kingdom, E-mail: sekhar@qub.ac.uk Fax: 44 2890 667023
H. S. Gamble
Affiliation:
School of Electrical & Electronic Engineering, The Queen's University of Belfast, United Kingdom, E-mail: sekhar@qub.ac.uk Fax: 44 2890 667023
C. K. Maiti
Affiliation:
Department of Electronics & ECE, Indian Institute of Technology, Kharagpur 721302, India, E-mail: sekhar@qub.ac.uk Fax: 44 2890 667023
T. Perova
Affiliation:
Department of Electrical & Electronic Engineering, Trinity College, University of Dublin, Ireland, E-mail: sekhar@qub.ac.uk Fax: 44 2890 667023
A. Moore
Affiliation:
Department of Electrical & Electronic Engineering, Trinity College, University of Dublin, Ireland, E-mail: sekhar@qub.ac.uk Fax: 44 2890 667023
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Abstract

The growth and structural characterization of UHV-compatible LPCVD grown strained-Si layer on linearly graded relaxed SiGe layer and the electrical properties of the high-k ultrathin ZrO2 films deposited on strained-Si layer using microwave-plasma CVD at low temperature (150°C) are reported. The strained-Si layer has been characterized using AFM, TEM and Raman spectroscopy. The C-V and G-V characteristics of ZrO2 films have been used to calculate the interface trap density, Dit, near the midgap energy, and the fixed oxide charge density, Qf/q. These are found to be 2.24 × 1012 cm−2 eV−1 and 1.45 × 1011 cm−2, respectively. Poole-Frenkel (PF) conduction mechanism is found to dominate the current conduction at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E3.22
Copyright
Copyright © Materials Research Society 2004

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References

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