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Single Crystal CVD Diamond Growth for Detection Device Fabrication

Published online by Cambridge University Press:  01 February 2011

Tranchant Nicolas ,
Dominique Tromson ,
Philippe Bergonzo  and
Milos Nesladek
Tranchant Nicolas
Affiliation:
ntrancha@yahoo.fr, CEA-LIST Saclay, DRT \ LIST \SSTM \ LTD, CEA Saclay, DRT \ LIST \ DETECS \ SSTM \ LTD, Bat 451, Pce 74, Gif-Sur-Yvette, 91191, France, Metropolitan, +33684900742
Dominique Tromson
Affiliation:
dominique.tromson@cea.fr, CEA\LIST Saclay, DRT\LIST\SSTM\LTD, Bat 451, Pce 74, Gif Sur Yvette, 91191, France, Metropolitan
Philippe Bergonzo
Affiliation:
philippe.bergonzo@cea.fr, CEA\LIST Saclay, DRT\LIST\SSTM\LTD, Bat 451, Pce 74, Gif Sur Yvette, 91191, France, Metropolitan
Milos Nesladek
Affiliation:
milos.nesladek@cea.fr, CEA\LIST Saclay, DRT\LIST\SSTM\LTD, Bat 451, Pce 74, Gif Sur Yvette, 91191, France, Metropolitan
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Abstract

Single crystal (SC) CVD diamond is known to exhibit superior electronic properties than polycrystalline ones for detection applications. In our study, tested samples were grown using CVD in an ASTEX type reactor, at various microwave powers and keeping all other parameters constant. The crystalline quality and purity of the samples were investigated using Raman spectroscopy and birefringence microscopy measurements.

The diamonds layers were chemically cleaned and oxidized, towards ionization chamber fabrication using Ni and Au contacts for rectifying properties. The devices electronics and detection properties were then evaluated: leakage currents were probed from I(V) measurements and the contacts behavior were tested under 60Co source at various dose rates. Time Of Flight (TOF) and Charge Collection Efficiency (CCE) measurements were evaluated under an 241Am alpha source and enabled the measurement of the mobility, carrier diffusion lengths and lifetime as a function of the growth parameters. Moreover the response under a UV pulsed flash lamp was probed in order to appreciate the CCE as a function of the repetition rate. The measurements demonstrated the importance of the power density during growth on the detection properties.

Keywords

crystal growthdiamonddevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1039: Symposium P – Diamond Electronics–Fundamentals to Applications II , 2007 , 1039-P10-03
Copyright
Copyright © Materials Research Society 2008

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References

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