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Semiconductor Devices and Materials for Optical Communication at 2-4 μM Wavelengths Range

Published online by Cambridge University Press:  25 February 2011

Gan Fuxi  and
Wang Hailong
Gan Fuxi
Affiliation:
Shanghai Institute of Optics and Fine Mechanics, Academia Sinica P.O.Box 800-216 Shanghai 201800, China
Wang Hailong
Affiliation:
Shanghai Institute of Optics and Fine Mechanics, Academia Sinica P.O.Box 800-216 Shanghai 201800, China
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Abstract

In this paper we reported most attractive semiconductor materials for optical sources and detectors with wavelength In the range of 2-4 μm, such as GaInAsSb/GaAlAsSb, InAsPSb/InAs heterostructure and PbCdSSe HgCdTe.The Lasers and detectors have been made using these materials. The performance of the devices were discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 187
Copyright
Copyright © Materials Research Society 1991

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