Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-26T04:45:34.364Z Has data issue: false hasContentIssue false

Carbon Nitride Films Formed using Sputtering and Negative Carbon Ion Sources

Published online by Cambridge University Press:  03 September 2012

I. H. Murzin
Affiliation:
Structured Materials Industries, Inc., 120 Centennial Av., Piscataway, NJ 08854, murzin@aol.com
G. S. Tompa
Affiliation:
Structured Materials Industries, Inc., 120 Centennial Av., Piscataway, NJ 08854, murzin@aol.com
J. Wei
Affiliation:
Stevens Institute of Technology, Castle Points on Hudson, Hoboken, NJ 07030
V. Muratov
Affiliation:
Stevens Institute of Technology, Castle Points on Hudson, Hoboken, NJ 07030
T. E. Fischer
Affiliation:
Stevens Institute of Technology, Castle Points on Hudson, Hoboken, NJ 07030
V. Yakovlev
Affiliation:
Instruments S.A., Inc., JOBIN YVON/SPEX Div., 3880 Park Av., Edison, NJ, 08820
Get access

Abstract

We report the results of using sputtering and negative carbon ion sources to prepare thin films of carbon nitride. In this work, we compare the structural, tribological, and optical properties of the carbon nitride films that were prepared by two different ion assisted techniques. In the first approach we used a magnetron gun to sputter deposit carbon in a nitrogen atmosphere. The second method utilized a beam of negatively charged carbon ions of 1 to 5 μA/cm2 current density impinging the substrate simultaneously with a positive nitrogen ion beam produced by a Kaufman source. We were able to synthesize microscopically smooth coatings with the carbon to nitrogen ratio of 1 : 0.47. These films possess wear rates lower than 5×10−7 mm3/Nm and friction coefficients in the range of 0.16 to 0.6. Raman spectroscopy revealed that the magnetron sputtered films are more structurally disordered than those formed with the negative carbon ion gun. FTIR showed the presence of the C≡N stretching mode in both types of films. Finally, spectroscopic ellipsometry produced films with dielectric constants as low as 2.3 in the photon energy range from 1.2 to 5 eV.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Liu, A.Y. and Cohen, M., Phys. Rev. B, 41 (1990) 10727.Google Scholar
2. Marton, D., Boyd, K.J., and Rabalais, J.W., Int. J. Modem Physics B, 9 (27) (1995) 35273558.Google Scholar
3. Kreider, K., Tadov, M.J., Gillen, G..J., Poirier, G.E., Robins, L.H., Ives, L.K., Bowers, W.D., Marinenko, R.B., and Smith, D.T., J. Mat. Res., 10 (12) (1995).Google Scholar
4. Merchant, A.R., et al., J. Appl. Phys., 79 (1) (1996), 69146919.Google Scholar
5. Han, H., He-Xiang, , and Feldman, B.J., Solid State Comm., 65 (9), (1988), 921923.Google Scholar
6. Khurshadov, A., Kato, K., and Daisuke, S., J. Vac. Sci. Technol. A14 (5) (1996) 2935–39.Google Scholar
7. Chi, E.J., Shim, J.Y., and Baik, H.K., 43rd AVS Symp., PA, FP-TuA5, Abstracts, p. 79 (1996).Google Scholar
8. Murzin, I.H., Tompa, G.S., Forsythe, E.W., Wei, J., Muratov, V., and Fischer, T., Presented at the 43rd AVS Symp., PA, submitted to the J. Vac. Sci. & Tech., 1996.Google Scholar
9. Tuinstra, F., and Koenig, J.L., J. Chem. Phys., 53 (1970) 1126.Google Scholar
10. Lee, E.H., Hembree, D.M. Jr., Gao, G.R. and Mansur, L.K., Phys. Rev. B48, (1993) 15540.Google Scholar
11. Beeman, D., Silverman, J., Lynds, R., and Anderson, M.R., Phys. Rev. B30 (1984) 870.Google Scholar
12. Savvides, N., J. Appl. Phys., 59 (12) (1996) 4133–45.Google Scholar
13. Geil, M.W., and Tamor, M.A., Encyclopedia of Applied Physics, Vol.5, (1993) 124.Google Scholar
14. Doll, G.L., Heremans, J.P., Perry, T.A., and Mantese, J.V., J. Mater. Res., 9 (1) (1994) 8590.Google Scholar
15. Semiconductor International, Nov. 1996, 60. See also, P. Singer, Semic. Int., May 1996, 95.Google Scholar
16. Cheng, M., Lin, X., Dravid, V.P., Chung, Y.W., and Sproul, W.D., Tribol. Transact., 36 (1993), 491495.Google Scholar
17. Sjostrom, T., et al., J. Vac. Sci. Technol., A14(1) (1996) 5662.Google Scholar