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Analysis on data storage area of NiO-ReRAM with secondary electron image

Published online by Cambridge University Press:  14 January 2011

K. Kinoshita ,
T. Makino ,
T. Yoda ,
K. Dobashi  and
S. Kishida
K. Kinoshita*
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, Tottori 680-8552, Japan; and Tottori University Electronic Display Research Center, Tottori 680-0941, Japan
T. Makino
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, Tottori 680-8552, Japan
T. Yoda
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, Tottori 680-8552, Japan
K. Dobashi
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, Tottori 680-8552, Japan
S. Kishida
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, Tottori 680-8552, Japan; and Tottori University Electronic Display Research Center, Tottori 680-0941, Japan
*
a)Address all correspondence to this author. e-mail: Kinoshita@ele.tottori-u.ac.jp
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Abstract

Both low and high resistance states (which were written by voltage application in a local region of NiO/Pt films using conducting atomic force microscopy [C-AFM]) were observed with scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). The writing regions are distinguishable as dark areas in a secondary electron image and thus can be specified without using a complicated sample fabrication process to narrow down the writing regions such as the photolithography technique. In addition, the writing regions were analyzed using energy-dispersive x-ray spectroscopy (EDS) mapping. No difference between the inside and outside of the writing regions is observed for all the mapped elements including C and Rh. Here, C and Rh are the most probable candidates for contamination that affect the secondary electron image. Therefore, our results suggested that the observed change in the contrast of the secondary electron image is related to the intrinsic change in the electronic state of the NiO film and a secondary electron yield is correlated to the physical properties of the film.

Keywords

MemoryOxideScanning Electron Microscopy (SEM)
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 1 , 14 January 2011 , pp. 45 - 49
Copyright
Copyright © Materials Research Society 2011

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References

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