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Thermally stable transparent Ru-Si-O Schottky contacts for n-type GaN and AlGaN

Published online by Cambridge University Press:  01 February 2011

E. Kaminska ,
A. Piotrowska ,
K. Golaszewska ,
R. Lukasiewicz ,
A. Szczesny ,
E. Kowalczyk ,
P. Jagodzinski ,
M. Guziewicz ,
A. Kudla  and
A. Barcz
...Show all authors
E. Kaminska
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland
A. Piotrowska
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland
K. Golaszewska
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland
R. Lukasiewicz
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland
A. Szczesny
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland Warsaw University of Technology, Institute of Microelectronics & Optoelectronics, ul. Koszykowa 75, Warszawa 00–662, Poland
E. Kowalczyk
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland
P. Jagodzinski
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland
M. Guziewicz
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland
A. Kudla
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland
A. Barcz
Affiliation:
Institute of Electron Technology, al. Lotnikow 32/46, 02–668 Warszawa, Poland Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02–668 Warszawa, Poland
R. Jakiela
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02–668 Warszawa, Poland
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Abstract

We have developed the deposition and studied the electrical characteristics and thermal reliability of Ru-based contacts on n- type GaN as well as on AlGaN/GaN heterostructure. Amorphous, conducting and transparent RuSiO4 contacts with their extremely low reverse currents and thermal stability up to 900°C, show great potential for use as Schottky contacts to n-type GaN and gate electrodes for AlGaN/GaN HEMT in high temperature, high power applications as well as in UV detectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.41
Copyright
Copyright © Materials Research Society 2005

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References

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